@inproceedings{44d0d3e673ff453cbdc3716283cd0c23,
title = "Estimation of surface diffusion length from AFM images of faceted GaAs(1|1|1|) homoepitaxial films",
abstract = "GaAs films growth on exact {\=(}{\=1}{\=1}1) substrates in the √19×√19 reconstruction regime always show facets. We have studied the surfaces of these films with an atomic force microscope. The facets are composed of vicinal surfaces which are tilted by small angles (≈2°) from the exact {\=(}{\=1}{\=1}1) plane. From the geometry of the facet, average displacement of adatoms is calculated. The results indicate that the diffusion length under the growth condition is more than 0. 2 μm.",
author = "K. Yang and Schowalter, \{L. J.\} and Thundat, \{T. G.\}",
year = "1993",
language = "English",
isbn = "1558991751",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "143--146",
editor = "Atwater, \{Harry A.\} and Eric Chason and Grabow, \{Marcia H.\} and Lagally, \{Max G.\}",
booktitle = "Evolution of Surface and Thin Film Microstructure",
note = "Proceedings of the 1992 Fall Meeting of the Materials Research Society ; Conference date: 30-11-1992 Through 04-12-1992",
}