ErAs epitaxial Ohmic contacts to InGaAs/InP

Uttam Singisetti; Jeramy D. Zimmerman; Mark A. Wistey; Joël Cagnon; Brian J. Thibeault; Mark J.W. Rodwell; Arthur C. Gossard; Susanne Stemmer; Seth R. Bank

doi:10.1063/1.3087313

ErAs epitaxial Ohmic contacts to InGaAs/InP

Uttam Singisetti
, Jeramy D. Zimmerman
, Mark A. Wistey
, Joël Cagnon
, Brian J. Thibeault
, Mark J.W. Rodwell
, Arthur C. Gossard
, Susanne Stemmer
, Seth R. Bank

Department of Electrical Engineering

University of California at Santa Barbara
University of Texas at Austin

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We report epitaxial ErAs semimetal Ohmic contacts onto n -type In _0.53 Ga_0.47 As grown on InP. The contacts were formed by molecular beam epitaxial growth of ErAs on InAs/InGaAs. Transmission line measurements showed minimum specific contact resistivities of 1.5±0.4 Ω μ m2 (horizontal specific contact resistivity ρ H, 4.20 Ω μm) for the ErAs/InAs/InGaAs contact. The extracted contact resistance is larger than the true value because of the lateral oxidation of ErAs. The contacts degrade over time and at elevated temperatures because of the oxidation of the ErAs, making it difficult to use as surface contacts, but they are suitable as low-resistance buried contacts.

Original language	English
Article number	083505
Journal	Applied Physics Letters
Volume	94
Issue number	8
DOIs	https://doi.org/10.1063/1.3087313
State	Published - 2009

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@article{8d470bfe407b4fc68eafee08db6ee67a,

title = "ErAs epitaxial Ohmic contacts to InGaAs/InP",

abstract = "We report epitaxial ErAs semimetal Ohmic contacts onto n -type In 0.53 Ga0.47 As grown on InP. The contacts were formed by molecular beam epitaxial growth of ErAs on InAs/InGaAs. Transmission line measurements showed minimum specific contact resistivities of 1.5±0.4 Ω μ m2 (horizontal specific contact resistivity ρ H, 4.20 Ω μm) for the ErAs/InAs/InGaAs contact. The extracted contact resistance is larger than the true value because of the lateral oxidation of ErAs. The contacts degrade over time and at elevated temperatures because of the oxidation of the ErAs, making it difficult to use as surface contacts, but they are suitable as low-resistance buried contacts.",

author = "Uttam Singisetti and Zimmerman, \{Jeramy D.\} and Wistey, \{Mark A.\} and Jo{\"e}l Cagnon and Thibeault, \{Brian J.\} and Rodwell, \{Mark J.W.\} and Gossard, \{Arthur C.\} and Susanne Stemmer and Bank, \{Seth R.\}",

year = "2009",

doi = "10.1063/1.3087313",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - ErAs epitaxial Ohmic contacts to InGaAs/InP

AU - Singisetti, Uttam

AU - Zimmerman, Jeramy D.

AU - Wistey, Mark A.

AU - Cagnon, Joël

AU - Thibeault, Brian J.

AU - Rodwell, Mark J.W.

AU - Gossard, Arthur C.

AU - Stemmer, Susanne

AU - Bank, Seth R.

PY - 2009

Y1 - 2009

N2 - We report epitaxial ErAs semimetal Ohmic contacts onto n -type In 0.53 Ga0.47 As grown on InP. The contacts were formed by molecular beam epitaxial growth of ErAs on InAs/InGaAs. Transmission line measurements showed minimum specific contact resistivities of 1.5±0.4 Ω μ m2 (horizontal specific contact resistivity ρ H, 4.20 Ω μm) for the ErAs/InAs/InGaAs contact. The extracted contact resistance is larger than the true value because of the lateral oxidation of ErAs. The contacts degrade over time and at elevated temperatures because of the oxidation of the ErAs, making it difficult to use as surface contacts, but they are suitable as low-resistance buried contacts.

AB - We report epitaxial ErAs semimetal Ohmic contacts onto n -type In 0.53 Ga0.47 As grown on InP. The contacts were formed by molecular beam epitaxial growth of ErAs on InAs/InGaAs. Transmission line measurements showed minimum specific contact resistivities of 1.5±0.4 Ω μ m2 (horizontal specific contact resistivity ρ H, 4.20 Ω μm) for the ErAs/InAs/InGaAs contact. The extracted contact resistance is larger than the true value because of the lateral oxidation of ErAs. The contacts degrade over time and at elevated temperatures because of the oxidation of the ErAs, making it difficult to use as surface contacts, but they are suitable as low-resistance buried contacts.

UR - https://www.scopus.com/pages/publications/61349159927

U2 - 10.1063/1.3087313

DO - 10.1063/1.3087313

M3 - Article

AN - SCOPUS:61349159927

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 083505

ER -

ErAs epitaxial Ohmic contacts to InGaAs/InP

Abstract

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