Epitaxial titanium diboride films grown by pulsed-laser deposition

Epitaxial, smooth, and low-resistivity titanium diboride (TiB₂) films have been grown on SiC substrates using pulsed-laser deposition. Combined studies from ex situ x-ray diffraction and in situ reflection high-energy electron diffraction indicate the crystallographic alignment between TiB ₂ and SiC both parallel and normal to the substrate. Atomic force microscopy and scanning electron microscopy studies show that these epitaxial films have a smooth surface, and the resistivity of these films is comparable to that of single-crystal TiB₂. Growth of these films is motivated by this material's structural and chemical similarity and lattice match to the newly discovered superconductor MgB₂, both to gain further insight into the physical mechanisms of diborides in general and, more specifically, as a component of MgB₂-based thin-film heterostructures.