Epitaxial nature and anisotropic dielectric properties of (Pb,Sr) Ti O3 thin films on NdGa O3 substrates

Y. Lin; X. Chen; S. W. Liu; C. L. Chen; Jang Sik Lee; Y. Li; Q. X. Jia; A. Bhalla

doi:10.1063/1.1897078

Epitaxial nature and anisotropic dielectric properties of (Pb,Sr) Ti O3 thin films on NdGa O3 substrates

Y. Lin
, X. Chen
, S. W. Liu
, C. L. Chen
, Jang Sik Lee
, Y. Li
, Q. X. Jia
, A. Bhalla

Department of Materials Design and Innovation

Los Alamos National Laboratory
University of Houston
Pennsylvania State University

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

Epitaxial behavior of (Pb,Sr) Ti O3 thin films on (110) NdGa O3 substrates fabricated in different conditions have been investigated using high resolution x-ray diffraction and characterized with interdigital dielectric measurement. A slow cooling results in films with a -axis normal to the surface (a -axis growth), whereas a fast cooling leads to growth of c -axis oriented films. The dielectric properties of the films prepared under different cooling rates are closely related to the crystalline structure of the films.

Original language	English
Article number	142902
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	14
DOIs	https://doi.org/10.1063/1.1897078
State	Published - Apr 4 2005

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abstract = "Epitaxial behavior of (Pb,Sr) Ti O3 thin films on (110) NdGa O3 substrates fabricated in different conditions have been investigated using high resolution x-ray diffraction and characterized with interdigital dielectric measurement. A slow cooling results in films with a -axis normal to the surface (a -axis growth), whereas a fast cooling leads to growth of c -axis oriented films. The dielectric properties of the films prepared under different cooling rates are closely related to the crystalline structure of the films.",

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AU - Lin, Y.

AU - Chen, X.

AU - Liu, S. W.

AU - Chen, C. L.

AU - Lee, Jang Sik

AU - Li, Y.

AU - Jia, Q. X.

AU - Bhalla, A.

PY - 2005/4/4

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N2 - Epitaxial behavior of (Pb,Sr) Ti O3 thin films on (110) NdGa O3 substrates fabricated in different conditions have been investigated using high resolution x-ray diffraction and characterized with interdigital dielectric measurement. A slow cooling results in films with a -axis normal to the surface (a -axis growth), whereas a fast cooling leads to growth of c -axis oriented films. The dielectric properties of the films prepared under different cooling rates are closely related to the crystalline structure of the films.

AB - Epitaxial behavior of (Pb,Sr) Ti O3 thin films on (110) NdGa O3 substrates fabricated in different conditions have been investigated using high resolution x-ray diffraction and characterized with interdigital dielectric measurement. A slow cooling results in films with a -axis normal to the surface (a -axis growth), whereas a fast cooling leads to growth of c -axis oriented films. The dielectric properties of the films prepared under different cooling rates are closely related to the crystalline structure of the films.

UR - https://www.scopus.com/pages/publications/17444375266

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DO - 10.1063/1.1897078

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ER -

Epitaxial nature and anisotropic dielectric properties of (Pb,Sr) Ti O3 thin films on NdGa O3 substrates

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