Epitaxial growth and metal-insulator transition of vanadium oxide thin films with controllable phases

Y. D. Ji; T. S. Pan; Z. Bi; W. Z. Liang; Y. Zhang; H. Z. Zeng; Q. Y. Wen; H. W. Zhang; C. L. Chen; Q. X. Jia; Y. Lin

doi:10.1063/1.4745843

Epitaxial growth and metal-insulator transition of vanadium oxide thin films with controllable phases

Y. D. Ji
, T. S. Pan
, Z. Bi
, W. Z. Liang
, Y. Zhang
, H. Z. Zeng
, Q. Y. Wen
, H. W. Zhang
, C. L. Chen
, Q. X. Jia
, Y. Lin

Department of Materials Design and Innovation

University of Electronic Science and Technology of China
Los Alamos National Laboratory
University of Texas at San Antonio
University of Houston

Research output: Contribution to journal › Article › peer-review

66 Scopus citations

Abstract

Vanadium oxide thin films with well controlled phases such as rhombohedra V ₂O ₃ and monoclinic VO ₂ were synthesized on Al ₂O ₃ (0001) substrates by optimizing the processing parameters of a polymer assisted deposition technique. X-ray diffraction and high-resolution transmission electron microscopy studies revealed that both V ₂O ₃ and VO ₂ films can be well controlled with good epitaxial quality. The temperature dependency of electrical resistivity demonstrated sharp metal-insulator transitions (MITs) for V ₂O ₃ and VO ₂ films. The crystallinity and the strains in the films are believed to play critical roles in determining the MIT properties.

Original language	English
Article number	071902
Journal	Applied Physics Letters
Volume	101
Issue number	7
DOIs	https://doi.org/10.1063/1.4745843
State	Published - Aug 13 2012

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@article{150b95fd49d64256ae6155bae07d89ad,

title = "Epitaxial growth and metal-insulator transition of vanadium oxide thin films with controllable phases",

abstract = "Vanadium oxide thin films with well controlled phases such as rhombohedra V 2O 3 and monoclinic VO 2 were synthesized on Al 2O 3 (0001) substrates by optimizing the processing parameters of a polymer assisted deposition technique. X-ray diffraction and high-resolution transmission electron microscopy studies revealed that both V 2O 3 and VO 2 films can be well controlled with good epitaxial quality. The temperature dependency of electrical resistivity demonstrated sharp metal-insulator transitions (MITs) for V 2O 3 and VO 2 films. The crystallinity and the strains in the films are believed to play critical roles in determining the MIT properties.",

author = "Ji, \{Y. D.\} and Pan, \{T. S.\} and Z. Bi and Liang, \{W. Z.\} and Y. Zhang and Zeng, \{H. Z.\} and Wen, \{Q. Y.\} and Zhang, \{H. W.\} and Chen, \{C. L.\} and Jia, \{Q. X.\} and Y. Lin",

year = "2012",

month = aug,

day = "13",

doi = "10.1063/1.4745843",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Epitaxial growth and metal-insulator transition of vanadium oxide thin films with controllable phases

AU - Ji, Y. D.

AU - Pan, T. S.

AU - Bi, Z.

AU - Liang, W. Z.

AU - Zhang, Y.

AU - Zeng, H. Z.

AU - Wen, Q. Y.

AU - Zhang, H. W.

AU - Chen, C. L.

AU - Jia, Q. X.

AU - Lin, Y.

PY - 2012/8/13

Y1 - 2012/8/13

N2 - Vanadium oxide thin films with well controlled phases such as rhombohedra V 2O 3 and monoclinic VO 2 were synthesized on Al 2O 3 (0001) substrates by optimizing the processing parameters of a polymer assisted deposition technique. X-ray diffraction and high-resolution transmission electron microscopy studies revealed that both V 2O 3 and VO 2 films can be well controlled with good epitaxial quality. The temperature dependency of electrical resistivity demonstrated sharp metal-insulator transitions (MITs) for V 2O 3 and VO 2 films. The crystallinity and the strains in the films are believed to play critical roles in determining the MIT properties.

AB - Vanadium oxide thin films with well controlled phases such as rhombohedra V 2O 3 and monoclinic VO 2 were synthesized on Al 2O 3 (0001) substrates by optimizing the processing parameters of a polymer assisted deposition technique. X-ray diffraction and high-resolution transmission electron microscopy studies revealed that both V 2O 3 and VO 2 films can be well controlled with good epitaxial quality. The temperature dependency of electrical resistivity demonstrated sharp metal-insulator transitions (MITs) for V 2O 3 and VO 2 films. The crystallinity and the strains in the films are believed to play critical roles in determining the MIT properties.

UR - https://www.scopus.com/pages/publications/84865412027

U2 - 10.1063/1.4745843

DO - 10.1063/1.4745843

M3 - Article

AN - SCOPUS:84865412027

SN - 0003-6951

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 071902

ER -

Epitaxial growth and metal-insulator transition of vanadium oxide thin films with controllable phases

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