@inproceedings{3ee8fc00a5e74aa2940e61cc05e0d70f,
title = "Epitaxial growth and anisotropic dielectric properties of La-doped Bi 4Ti3O12 thin films",
abstract = "To investigate the anisotropic dielectric properties of layer-structured bismuth-based ferroelectrics along different crystal directions, we fabricate devices along different crystal orientations using highly c-axis oriented Bi3.25La0.75Ti3O12 (BLT) thin films on (001) LaAlO3 (LAO) substrates. Experimental results have shown that the dielectric properties of the BLT films are highly anisotropic along different crystal directions. The dielectric constants (IMHz at 300 K) are 358 and 160 along [100] and [110], respectively. Dielectric nonlinearity is also detected along these crystal directions. On the other hand, a much smaller dielectric constant and no detectable dielectric nonlinearity in a field range of 0-200 kV/cm are observed for films along [001] when c-axis oriented SRO is used as the bottom electrode.",
keywords = "Anisotropic dielectric property, Crystal direction, Epitaxial growth",
author = "Lee, \{Jang Sik\} and Jia, \{Q. X.\}",
year = "2007",
doi = "10.4028/3-908451-31-0.177",
language = "English",
isbn = "3908451310",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
number = "PART 1",
pages = "177--180",
booktitle = "Advances in Nanomaterials and Processing - IUMRS - ICA - 2006 International Conference in Asia",
address = "Switzerland",
edition = "PART 1",
note = "IUMRS International Conference in Asia 2006, IUMRS-ICA 2006 ; Conference date: 10-09-2006 Through 14-09-2006",
}