Epitaxial BaF2 films on InP(100) deposited by r.f. magnetron sputtering

Q. X. Jia; W. A. Anderson

doi:10.1016/0040-6090(94)90878-8

Epitaxial BaF₂ films on InP(100) deposited by r.f. magnetron sputtering

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Abstract

Epitaxial BaF₂ thin films were deposited onto InP(100) at a substrate temperature ranging from 450 to 480°C by r.f. magnetron sputtering. X-ray diffraction analysis revealed a pure c-axis-oriented film perpendicular to the substrate surface. The X-ray rocking curve of the full width at half-maximum for BaF₂(200) was less than 0.8°. The X-ray pole figure investigation showed good in-plane alignment of the crystals. A scanning electron microscopy surface scan indicated a highly textured film with grid growth morphology.

Original language	English
Pages (from-to)	60-63
Number of pages	4
Journal	Thin Solid Films
Volume	245
Issue number	1-2
DOIs	https://doi.org/10.1016/0040-6090(94)90878-8
State	Published - Jun 1 1994

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@article{202b8badf6574190b0c839fe7d2f9976,

title = "Epitaxial BaF2 films on InP(100) deposited by r.f. magnetron sputtering",

abstract = "Epitaxial BaF2 thin films were deposited onto InP(100) at a substrate temperature ranging from 450 to 480°C by r.f. magnetron sputtering. X-ray diffraction analysis revealed a pure c-axis-oriented film perpendicular to the substrate surface. The X-ray rocking curve of the full width at half-maximum for BaF2(200) was less than 0.8°. The X-ray pole figure investigation showed good in-plane alignment of the crystals. A scanning electron microscopy surface scan indicated a highly textured film with grid growth morphology.",

author = "Jia, \{Q. X.\} and Anderson, \{W. A.\}",

year = "1994",

month = jun,

day = "1",

doi = "10.1016/0040-6090(94)90878-8",

language = "English",

volume = "245",

pages = "60--63",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1-2",

}

TY - JOUR

T1 - Epitaxial BaF2 films on InP(100) deposited by r.f. magnetron sputtering

AU - Jia, Q. X.

AU - Anderson, W. A.

PY - 1994/6/1

Y1 - 1994/6/1

N2 - Epitaxial BaF2 thin films were deposited onto InP(100) at a substrate temperature ranging from 450 to 480°C by r.f. magnetron sputtering. X-ray diffraction analysis revealed a pure c-axis-oriented film perpendicular to the substrate surface. The X-ray rocking curve of the full width at half-maximum for BaF2(200) was less than 0.8°. The X-ray pole figure investigation showed good in-plane alignment of the crystals. A scanning electron microscopy surface scan indicated a highly textured film with grid growth morphology.

AB - Epitaxial BaF2 thin films were deposited onto InP(100) at a substrate temperature ranging from 450 to 480°C by r.f. magnetron sputtering. X-ray diffraction analysis revealed a pure c-axis-oriented film perpendicular to the substrate surface. The X-ray rocking curve of the full width at half-maximum for BaF2(200) was less than 0.8°. The X-ray pole figure investigation showed good in-plane alignment of the crystals. A scanning electron microscopy surface scan indicated a highly textured film with grid growth morphology.

UR - https://www.scopus.com/pages/publications/0028448018

U2 - 10.1016/0040-6090(94)90878-8

DO - 10.1016/0040-6090(94)90878-8

M3 - Article

AN - SCOPUS:0028448018

SN - 0040-6090

VL - 245

SP - 60

EP - 63

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Epitaxial BaF₂ films on InP(100) deposited by r.f. magnetron sputtering

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