Epitaxial and conductive RuO2 thin films grown on MgO and LaAlO3 by MOCVD

P. Lu; S. He; F. X. Li; Q. X. Jia

Epitaxial and conductive RuO₂ thin films grown on MgO and LaAlO₃ by MOCVD

P. Lu
, S. He
, F. X. Li
, Q. X. Jia

Department of Materials Design and Innovation

New Mexico Institute of Mining and Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

Conductive RuO₂ thin films have been grown epitaxially on (100) MgO and (100) LaAlO₃ substrates by metal-organic chemical vapor deposition (MOCVD) at different temperatures. The microstructural properties of the RuO₂ films have been studied using x-ray diffraction and scanning electron microscopy. Different growth and microstructure properties were observed for the films deposited on the two substrates. The films on MgO are epitaxial at deposition temperatures as low as 350°C, and consist of two variants with an orientation relationship given by (110) RuO₂//(100) MgO and [001] RuO₂//[011]MgO. The films on LaAlO₃, on the other hand, are epitaxial only at deposition temperatures of 600°C and above, and contain four variants with an orientation relationship given by (200)RuO₂//(100)LaAlO₃ and [011] RuO₂//[011] LaAlO₃. The observed microstructures of epitaxially grown films can be explained based on geometric considerations for the films and substrates.

Original language	English
Pages (from-to)	147-152
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	541
State	Published - 1999
Event	Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' - Boston, MA, USA Duration: Nov 30 1998 → Dec 3 1998

Cite this

@article{4515808ac2814958bd5c61a2fb685b41,

title = "Epitaxial and conductive RuO2 thin films grown on MgO and LaAlO3 by MOCVD",

abstract = "Conductive RuO2 thin films have been grown epitaxially on (100) MgO and (100) LaAlO3 substrates by metal-organic chemical vapor deposition (MOCVD) at different temperatures. The microstructural properties of the RuO2 films have been studied using x-ray diffraction and scanning electron microscopy. Different growth and microstructure properties were observed for the films deposited on the two substrates. The films on MgO are epitaxial at deposition temperatures as low as 350°C, and consist of two variants with an orientation relationship given by (110) RuO2//(100) MgO and [001] RuO2//[011]MgO. The films on LaAlO3, on the other hand, are epitaxial only at deposition temperatures of 600°C and above, and contain four variants with an orientation relationship given by (200)RuO2//(100)LaAlO3 and [011] RuO2//[011] LaAlO3. The observed microstructures of epitaxially grown films can be explained based on geometric considerations for the films and substrates.",

author = "P. Lu and S. He and Li, \{F. X.\} and Jia, \{Q. X.\}",

year = "1999",

language = "English",

volume = "541",

pages = "147--152",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998' ; Conference date: 30-11-1998 Through 03-12-1998",

}

TY - JOUR

T1 - Epitaxial and conductive RuO2 thin films grown on MgO and LaAlO3 by MOCVD

AU - Lu, P.

AU - He, S.

AU - Li, F. X.

AU - Jia, Q. X.

PY - 1999

Y1 - 1999

N2 - Conductive RuO2 thin films have been grown epitaxially on (100) MgO and (100) LaAlO3 substrates by metal-organic chemical vapor deposition (MOCVD) at different temperatures. The microstructural properties of the RuO2 films have been studied using x-ray diffraction and scanning electron microscopy. Different growth and microstructure properties were observed for the films deposited on the two substrates. The films on MgO are epitaxial at deposition temperatures as low as 350°C, and consist of two variants with an orientation relationship given by (110) RuO2//(100) MgO and [001] RuO2//[011]MgO. The films on LaAlO3, on the other hand, are epitaxial only at deposition temperatures of 600°C and above, and contain four variants with an orientation relationship given by (200)RuO2//(100)LaAlO3 and [011] RuO2//[011] LaAlO3. The observed microstructures of epitaxially grown films can be explained based on geometric considerations for the films and substrates.

AB - Conductive RuO2 thin films have been grown epitaxially on (100) MgO and (100) LaAlO3 substrates by metal-organic chemical vapor deposition (MOCVD) at different temperatures. The microstructural properties of the RuO2 films have been studied using x-ray diffraction and scanning electron microscopy. Different growth and microstructure properties were observed for the films deposited on the two substrates. The films on MgO are epitaxial at deposition temperatures as low as 350°C, and consist of two variants with an orientation relationship given by (110) RuO2//(100) MgO and [001] RuO2//[011]MgO. The films on LaAlO3, on the other hand, are epitaxial only at deposition temperatures of 600°C and above, and contain four variants with an orientation relationship given by (200)RuO2//(100)LaAlO3 and [011] RuO2//[011] LaAlO3. The observed microstructures of epitaxially grown films can be explained based on geometric considerations for the films and substrates.

UR - https://www.scopus.com/pages/publications/0032592369

M3 - Conference article

AN - SCOPUS:0032592369

SN - 0272-9172

VL - 541

SP - 147

EP - 152

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1998 MRS Fall Meeting - The Symposium 'Advanced Catalytic Materials-1998'

Y2 - 30 November 1998 through 3 December 1998

ER -

Epitaxial and conductive RuO₂ thin films grown on MgO and LaAlO₃ by MOCVD

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