Enhancement of the Schottky barrier height of Au/ZnSSe diodes

A. Z. Wang; W. A. Anderson

doi:10.1063/1.113291

Enhancement of the Schottky barrier height of Au/ZnSSe diodes

A. Z. Wang
, W. A. Anderson

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We report a significant enhancement of the Schottky barrier height of Au/N-ZnS_0.07Se_0.93 diodes formed by the cryogenic process. The improvement is around 25%. This technique had previously been successfully applied to some narrow band gap semiconductors, such as InP and InGaAs. We explain this improvement by the metal-insulator-semiconductor model and the uniformity of the metal film so-obtained. This technique is proven to be of importance for making low dark/leakage current visible light sensitive optoelectronic devices.

Original language	English
Pages (from-to)	1963
Number of pages	1
Journal	Applied Physics Letters
Volume	66
Issue number	15
DOIs	https://doi.org/10.1063/1.113291
State	Published - 1995

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title = "Enhancement of the Schottky barrier height of Au/ZnSSe diodes",

abstract = "We report a significant enhancement of the Schottky barrier height of Au/N-ZnS0.07Se0.93 diodes formed by the cryogenic process. The improvement is around 25\%. This technique had previously been successfully applied to some narrow band gap semiconductors, such as InP and InGaAs. We explain this improvement by the metal-insulator-semiconductor model and the uniformity of the metal film so-obtained. This technique is proven to be of importance for making low dark/leakage current visible light sensitive optoelectronic devices.",

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AB - We report a significant enhancement of the Schottky barrier height of Au/N-ZnS0.07Se0.93 diodes formed by the cryogenic process. The improvement is around 25%. This technique had previously been successfully applied to some narrow band gap semiconductors, such as InP and InGaAs. We explain this improvement by the metal-insulator-semiconductor model and the uniformity of the metal film so-obtained. This technique is proven to be of importance for making low dark/leakage current visible light sensitive optoelectronic devices.

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JO - Applied Physics Letters

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Enhancement of the Schottky barrier height of Au/ZnSSe diodes

Abstract

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