Enhancement-mode n-polar GaN MISFETs with self-aligned source/drain regrowth

Uttam Singisetti; Man Hoi Wong; Sansaptak Dasgupta; Nidhi; Brian Swenson; Brian J. Thibeault; James S. Speck; Umesh K. Mishra

doi:10.1109/LED.2010.2090125

Enhancement-mode n-polar GaN MISFETs with self-aligned source/drain regrowth

Uttam Singisetti
, Man Hoi Wong
, Sansaptak Dasgupta
, Nidhi
, Brian Swenson
, Brian J. Thibeault
, James S. Speck
, Umesh K. Mishra

Department of Electrical Engineering

University of California at Santa Barbara

Research output: Contribution to journal › Article › peer-review

66 Scopus citations

Abstract

We report gate-first enhancement-mode (E-mode) N-polar GaN MISFET devices with self-aligned source/drain regions by molecular beam epitaxy regrowth and with a SiN_x gate dielectric. E-mode operation at Vds = 4.0 V is demonstrated for devices with gate lengths > 0.18 μ with a 20-nm GaN channel and a high-temperature SiNx gate dielectric. A high drain current of 0.74 A/mm was measured for an L_g = 0.62-μ device with a peak transconductance of 225 mS/mm and a positive threshold voltage of 1 V. The on resistance of the device was 2 ωmm. Devices show short-channel effect with decreasing gate lengths.

Original language	English
Article number	5671470
Pages (from-to)	137-139
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	2
DOIs	https://doi.org/10.1109/LED.2010.2090125
State	Published - Feb 2011

Keywords

Enhancement-mode GaN HEMT
MIS-HEMT
MISFET
N-polar GaN
self-aligned FET

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10.1109/LED.2010.2090125

Cite this

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title = "Enhancement-mode n-polar GaN MISFETs with self-aligned source/drain regrowth",

abstract = "We report gate-first enhancement-mode (E-mode) N-polar GaN MISFET devices with self-aligned source/drain regions by molecular beam epitaxy regrowth and with a SiNx gate dielectric. E-mode operation at Vds = 4.0 V is demonstrated for devices with gate lengths > 0.18 μ with a 20-nm GaN channel and a high-temperature SiNx gate dielectric. A high drain current of 0.74 A/mm was measured for an Lg = 0.62-μ device with a peak transconductance of 225 mS/mm and a positive threshold voltage of 1 V. The on resistance of the device was 2 ωmm. Devices show short-channel effect with decreasing gate lengths.",

keywords = "Enhancement-mode GaN HEMT, MIS-HEMT, MISFET, N-polar GaN, self-aligned FET",

author = "Uttam Singisetti and Wong, \{Man Hoi\} and Sansaptak Dasgupta and Nidhi and Brian Swenson and Thibeault, \{Brian J.\} and Speck, \{James S.\} and Mishra, \{Umesh K.\}",

year = "2011",

month = feb,

doi = "10.1109/LED.2010.2090125",

language = "English",

volume = "32",

pages = "137--139",

journal = "IEEE Electron Device Letters",

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TY - JOUR

T1 - Enhancement-mode n-polar GaN MISFETs with self-aligned source/drain regrowth

AU - Singisetti, Uttam

AU - Wong, Man Hoi

AU - Dasgupta, Sansaptak

AU - Nidhi,

AU - Swenson, Brian

AU - Thibeault, Brian J.

AU - Speck, James S.

AU - Mishra, Umesh K.

PY - 2011/2

Y1 - 2011/2

N2 - We report gate-first enhancement-mode (E-mode) N-polar GaN MISFET devices with self-aligned source/drain regions by molecular beam epitaxy regrowth and with a SiNx gate dielectric. E-mode operation at Vds = 4.0 V is demonstrated for devices with gate lengths > 0.18 μ with a 20-nm GaN channel and a high-temperature SiNx gate dielectric. A high drain current of 0.74 A/mm was measured for an Lg = 0.62-μ device with a peak transconductance of 225 mS/mm and a positive threshold voltage of 1 V. The on resistance of the device was 2 ωmm. Devices show short-channel effect with decreasing gate lengths.

AB - We report gate-first enhancement-mode (E-mode) N-polar GaN MISFET devices with self-aligned source/drain regions by molecular beam epitaxy regrowth and with a SiNx gate dielectric. E-mode operation at Vds = 4.0 V is demonstrated for devices with gate lengths > 0.18 μ with a 20-nm GaN channel and a high-temperature SiNx gate dielectric. A high drain current of 0.74 A/mm was measured for an Lg = 0.62-μ device with a peak transconductance of 225 mS/mm and a positive threshold voltage of 1 V. The on resistance of the device was 2 ωmm. Devices show short-channel effect with decreasing gate lengths.

KW - Enhancement-mode GaN HEMT

KW - MIS-HEMT

KW - MISFET

KW - N-polar GaN

KW - self-aligned FET

UR - https://www.scopus.com/pages/publications/79151470223

U2 - 10.1109/LED.2010.2090125

DO - 10.1109/LED.2010.2090125

M3 - Article

AN - SCOPUS:79151470223

SN - 0741-3106

VL - 32

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EP - 139

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 2

M1 - 5671470

ER -

Enhancement-mode n-polar GaN MISFETs with self-aligned source/drain regrowth

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Keywords

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