Enhancement Mode In0.53Ga0.47As MOSFET with self-aligned epitaxial Source/Drain regrowth

Uttam Singisetti; Mark A. Wistey; Gregory J. Burek; Ashish K. Baraskar; Joël Cagnon; Brian Thibeault; Arthur C. Gossard; Susanne Stemmer; Mark J.W. Rodwell; Eunji Kim; Byungha Shin; Paul C. McIntyre; Yong Ju Lee

doi:10.1109/ICIPRM.2009.5012456

Enhancement Mode In_0.53Ga_0.47As MOSFET with self-aligned epitaxial Source/Drain regrowth

Uttam Singisetti
, Mark A. Wistey
, Gregory J. Burek
, Ashish K. Baraskar
, Joël Cagnon
, Brian Thibeault
, Arthur C. Gossard
, Susanne Stemmer
, Mark J.W. Rodwell
, Eunji Kim
, Byungha Shin
, Paul C. McIntyre
, Yong Ju Lee

Department of Electrical Engineering

University of California at Santa Barbara
Stanford University
Intel

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

9 Scopus citations

Abstract

A scalable, self-aligned In_0.53Ga_0.47As MOSFET process was developed and enhancement mode device operation was demonstrated. The 0.7 μm L_g device shows a maximum drive current of 0.14 mA/μm at V_gs=4.0V and V_ds=2.5 V. The devices have almost an order of magnitude larger drive current than our previously reported MOSFETs. The channel layer was 5 nm thick InGaAs with InAlAs bottom barrier for vertical confinement. 4.7 nm of Al₂O₃ (∼ 2 nm EOT) dielectric was deposited in an atomic layer deposition tool. After gate formation, self-aligned source/drain regions were defined by migration enhanced epitaxial (MEE) regrowth, and self-aligned in-situ Mo source/drain contacts were formed.

Original language	English
Title of host publication	IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Pages	120-123
Number of pages	4
DOIs	https://doi.org/10.1109/ICIPRM.2009.5012456
State	Published - 2009
Event	IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 - Newport Beach, CA, United States Duration: May 10 2009 → May 14 2009

Publication series

Name	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN (Print)	1092-8669

Conference

Conference	IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Country/Territory	United States
City	Newport Beach, CA
Period	05/10/09 → 05/14/09

Keywords

III-V MOSFET
InGaAs MOSFET
MBE regrowth
MEE

Access to Document

10.1109/ICIPRM.2009.5012456

Cite this

Singisetti, U., Wistey, M. A., Burek, G. J., Baraskar, A. K., Cagnon, J., Thibeault, B., Gossard, A. C., Stemmer, S., Rodwell, M. J. W., Kim, E., Shin, B., McIntyre, P. C., & Lee, Y. J. (2009). Enhancement Mode In_0.53Ga_0.47As MOSFET with self-aligned epitaxial Source/Drain regrowth. In IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 (pp. 120-123). Article 5012456 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2009.5012456

@inproceedings{350bec61ba0442478cfae84b470ea9ec,

title = "Enhancement Mode In0.53Ga0.47As MOSFET with self-aligned epitaxial Source/Drain regrowth",

abstract = "A scalable, self-aligned In0.53Ga0.47As MOSFET process was developed and enhancement mode device operation was demonstrated. The 0.7 μm Lg device shows a maximum drive current of 0.14 mA/μm at Vgs=4.0V and Vds=2.5 V. The devices have almost an order of magnitude larger drive current than our previously reported MOSFETs. The channel layer was 5 nm thick InGaAs with InAlAs bottom barrier for vertical confinement. 4.7 nm of Al2O3 (∼ 2 nm EOT) dielectric was deposited in an atomic layer deposition tool. After gate formation, self-aligned source/drain regions were defined by migration enhanced epitaxial (MEE) regrowth, and self-aligned in-situ Mo source/drain contacts were formed.",

keywords = "III-V MOSFET, InGaAs MOSFET, MBE regrowth, MEE",

author = "Uttam Singisetti and Wistey, \{Mark A.\} and Burek, \{Gregory J.\} and Baraskar, \{Ashish K.\} and Jo{\"e}l Cagnon and Brian Thibeault and Gossard, \{Arthur C.\} and Susanne Stemmer and Rodwell, \{Mark J.W.\} and Eunji Kim and Byungha Shin and McIntyre, \{Paul C.\} and Lee, \{Yong Ju\}",

year = "2009",

doi = "10.1109/ICIPRM.2009.5012456",

language = "English",

isbn = "9781424434336",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

pages = "120--123",

booktitle = "IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009",

note = "IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009 ; Conference date: 10-05-2009 Through 14-05-2009",

}

Singisetti, U, Wistey, MA, Burek, GJ, Baraskar, AK, Cagnon, J, Thibeault, B, Gossard, AC, Stemmer, S, Rodwell, MJW, Kim, E, Shin, B, McIntyre, PC & Lee, YJ 2009, Enhancement Mode In_0.53Ga_0.47As MOSFET with self-aligned epitaxial Source/Drain regrowth. in IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009., 5012456, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 120-123, IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009, Newport Beach, CA, United States, 05/10/09. https://doi.org/10.1109/ICIPRM.2009.5012456

Enhancement Mode In_0.53Ga_0.47As MOSFET with self-aligned epitaxial Source/Drain regrowth. / Singisetti, Uttam; Wistey, Mark A.; Burek, Gregory J. et al.
IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009. 2009. p. 120-123 5012456 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Enhancement Mode In0.53Ga0.47As MOSFET with self-aligned epitaxial Source/Drain regrowth

AU - Singisetti, Uttam

AU - Wistey, Mark A.

AU - Burek, Gregory J.

AU - Baraskar, Ashish K.

AU - Cagnon, Joël

AU - Thibeault, Brian

AU - Gossard, Arthur C.

AU - Stemmer, Susanne

AU - Rodwell, Mark J.W.

AU - Kim, Eunji

AU - Shin, Byungha

AU - McIntyre, Paul C.

AU - Lee, Yong Ju

PY - 2009

Y1 - 2009

N2 - A scalable, self-aligned In0.53Ga0.47As MOSFET process was developed and enhancement mode device operation was demonstrated. The 0.7 μm Lg device shows a maximum drive current of 0.14 mA/μm at Vgs=4.0V and Vds=2.5 V. The devices have almost an order of magnitude larger drive current than our previously reported MOSFETs. The channel layer was 5 nm thick InGaAs with InAlAs bottom barrier for vertical confinement. 4.7 nm of Al2O3 (∼ 2 nm EOT) dielectric was deposited in an atomic layer deposition tool. After gate formation, self-aligned source/drain regions were defined by migration enhanced epitaxial (MEE) regrowth, and self-aligned in-situ Mo source/drain contacts were formed.

AB - A scalable, self-aligned In0.53Ga0.47As MOSFET process was developed and enhancement mode device operation was demonstrated. The 0.7 μm Lg device shows a maximum drive current of 0.14 mA/μm at Vgs=4.0V and Vds=2.5 V. The devices have almost an order of magnitude larger drive current than our previously reported MOSFETs. The channel layer was 5 nm thick InGaAs with InAlAs bottom barrier for vertical confinement. 4.7 nm of Al2O3 (∼ 2 nm EOT) dielectric was deposited in an atomic layer deposition tool. After gate formation, self-aligned source/drain regions were defined by migration enhanced epitaxial (MEE) regrowth, and self-aligned in-situ Mo source/drain contacts were formed.

KW - III-V MOSFET

KW - InGaAs MOSFET

KW - MBE regrowth

KW - MEE

UR - https://www.scopus.com/pages/publications/70349486832

U2 - 10.1109/ICIPRM.2009.5012456

DO - 10.1109/ICIPRM.2009.5012456

M3 - Conference contribution

AN - SCOPUS:70349486832

SN - 9781424434336

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SP - 120

EP - 123

BT - IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009

T2 - IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009

Y2 - 10 May 2009 through 14 May 2009

ER -

Singisetti U, Wistey MA, Burek GJ, Baraskar AK, Cagnon J, Thibeault B et al. Enhancement Mode In_0.53Ga_0.47As MOSFET with self-aligned epitaxial Source/Drain regrowth. In IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009. 2009. p. 120-123. 5012456. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2009.5012456