Enhanced photoluminescence intensity of 1.3-μm multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step

H. Y. Liu; T. J. Badcock; I. R. Sellers; W. M. Soong; K. M. Groom; M. Hopkinson; D. J. Mowbray; M. S. Skolnick

doi:10.1016/j.physe.2004.08.038

Enhanced photoluminescence intensity of 1.3-μm multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step

H. Y. Liu
, T. J. Badcock
, I. R. Sellers
, W. M. Soong
, K. M. Groom
, M. Hopkinson
, D. J. Mowbray
, M. S. Skolnick

Department of Electrical Engineering

University of Sheffield

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

The effects of growth temperature of the GaAs spacer layers (SPLs) on the photoluminescence (PL) efficiency of multi-layer GaAs-based 1.3-μm InAs/InGaAs dots-in-well (DWELL) structures have been investigated. It is found that the PL intensity of DWELLs is enhanced by incorporating a high growth temperature step for GaAs SPLs. This improved PL efficiency could be understood in term of reducing the non-radiative recombination centers. An extremely low continuous-wave room-temperature threshold current density of 35 A/cm ² is achieved for an as-cleaved 5-layer device with emission at 1.31 μm by using this growth technique.

Original language	English
Pages (from-to)	129-132
Number of pages	4
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	26
Issue number	1-4
DOIs	https://doi.org/10.1016/j.physe.2004.08.038
State	Published - Feb 2005
Event	International Conference on Quantum Dots - Banff, Alberta, Canada Duration: May 10 2004 → May 13 2004

Keywords

1.3 μm
High growth temperature spacer layer
InAs/InGaAs dot-in-well structure
Quantum dots
Semiconductor lasers

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10.1016/j.physe.2004.08.038

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Liu, H. Y., Badcock, T. J., Sellers, I. R., Soong, W. M., Groom, K. M., Hopkinson, M., Mowbray, D. J., & Skolnick, M. S. (2005). Enhanced photoluminescence intensity of 1.3-μm multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step. Physica E: Low-Dimensional Systems and Nanostructures, 26(1-4), 129-132. https://doi.org/10.1016/j.physe.2004.08.038

@article{2263fbddbf6e4b9ebae3d62e1088f7ca,

title = "Enhanced photoluminescence intensity of 1.3-μm multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step",

abstract = "The effects of growth temperature of the GaAs spacer layers (SPLs) on the photoluminescence (PL) efficiency of multi-layer GaAs-based 1.3-μm InAs/InGaAs dots-in-well (DWELL) structures have been investigated. It is found that the PL intensity of DWELLs is enhanced by incorporating a high growth temperature step for GaAs SPLs. This improved PL efficiency could be understood in term of reducing the non-radiative recombination centers. An extremely low continuous-wave room-temperature threshold current density of 35 A/cm 2 is achieved for an as-cleaved 5-layer device with emission at 1.31 μm by using this growth technique.",

keywords = "1.3 μm, High growth temperature spacer layer, InAs/InGaAs dot-in-well structure, Quantum dots, Semiconductor lasers",

author = "Liu, \{H. Y.\} and Badcock, \{T. J.\} and Sellers, \{I. R.\} and Soong, \{W. M.\} and Groom, \{K. M.\} and M. Hopkinson and Mowbray, \{D. J.\} and Skolnick, \{M. S.\}",

year = "2005",

month = feb,

doi = "10.1016/j.physe.2004.08.038",

language = "English",

volume = "26",

pages = "129--132",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "1-4",

note = "International Conference on Quantum Dots ; Conference date: 10-05-2004 Through 13-05-2004",

}

Liu, HY, Badcock, TJ, Sellers, IR, Soong, WM, Groom, KM, Hopkinson, M, Mowbray, DJ & Skolnick, MS 2005, 'Enhanced photoluminescence intensity of 1.3-μm multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step', Physica E: Low-Dimensional Systems and Nanostructures, vol. 26, no. 1-4, pp. 129-132. https://doi.org/10.1016/j.physe.2004.08.038

Enhanced photoluminescence intensity of 1.3-μm multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step. / Liu, H. Y.; Badcock, T. J.; Sellers, I. R. et al.
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 26, No. 1-4, 02.2005, p. 129-132.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Enhanced photoluminescence intensity of 1.3-μm multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step

AU - Liu, H. Y.

AU - Badcock, T. J.

AU - Sellers, I. R.

AU - Soong, W. M.

AU - Groom, K. M.

AU - Hopkinson, M.

AU - Mowbray, D. J.

AU - Skolnick, M. S.

PY - 2005/2

Y1 - 2005/2

N2 - The effects of growth temperature of the GaAs spacer layers (SPLs) on the photoluminescence (PL) efficiency of multi-layer GaAs-based 1.3-μm InAs/InGaAs dots-in-well (DWELL) structures have been investigated. It is found that the PL intensity of DWELLs is enhanced by incorporating a high growth temperature step for GaAs SPLs. This improved PL efficiency could be understood in term of reducing the non-radiative recombination centers. An extremely low continuous-wave room-temperature threshold current density of 35 A/cm 2 is achieved for an as-cleaved 5-layer device with emission at 1.31 μm by using this growth technique.

AB - The effects of growth temperature of the GaAs spacer layers (SPLs) on the photoluminescence (PL) efficiency of multi-layer GaAs-based 1.3-μm InAs/InGaAs dots-in-well (DWELL) structures have been investigated. It is found that the PL intensity of DWELLs is enhanced by incorporating a high growth temperature step for GaAs SPLs. This improved PL efficiency could be understood in term of reducing the non-radiative recombination centers. An extremely low continuous-wave room-temperature threshold current density of 35 A/cm 2 is achieved for an as-cleaved 5-layer device with emission at 1.31 μm by using this growth technique.

KW - 1.3 μm

KW - High growth temperature spacer layer

KW - InAs/InGaAs dot-in-well structure

KW - Quantum dots

KW - Semiconductor lasers

UR - https://www.scopus.com/pages/publications/13444249842

U2 - 10.1016/j.physe.2004.08.038

DO - 10.1016/j.physe.2004.08.038

M3 - Conference article

AN - SCOPUS:13444249842

SN - 1386-9477

VL - 26

SP - 129

EP - 132

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

T2 - International Conference on Quantum Dots

Y2 - 10 May 2004 through 13 May 2004

ER -

Enhanced photoluminescence intensity of 1.3-μm multi-layer InAs/InGaAs dots-in-well structure using the high growth temperature spacer layer step

Abstract

Keywords

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