Enhanced dielectric properties of (Ba,Sr)TiO3 thin tilms applicable to tunable microwave devices

Bae Ho Park; Quanxi Jia

doi:10.1143/JJAP.41.7222

Enhanced dielectric properties of (Ba,Sr)TiO₃ thin tilms applicable to tunable microwave devices

Bae Ho Park
, Quanxi Jia

Department of Materials Design and Innovation

Konkuk University

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

We have heteroepitaxially deposited pure and TiO₂-doped Ba _0.6Sr_0.4TiO₃(BST-0.4) films on (001)-oriented MgO substrates using pulsed-laser deposition. By optimizing microstructures, we have successfully increased the dielectric nonlinearity and decreased the dielectric loss of BST films. By inserting a very thin Ba_1-xSr _xTiO₃ (x = 0.1-0.7) interlayer between the MgO substrate and the main layer of BST-0.4, we are able to manipulate strain states and dielectric properties of BST-0.4 films. In addition, we have systematically compared the dielectric properties of pure and TiO₂-doped BST-0.4 films.

Original language	English
Pages (from-to)	7222-7225
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	41
Issue number	11 B
DOIs	https://doi.org/10.1143/JJAP.41.7222
State	Published - Nov 2002

Keywords

BaSrTio
Dielectric properties
Microstructure
Strain states
TiO-doped

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10.1143/JJAP.41.7222

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title = "Enhanced dielectric properties of (Ba,Sr)TiO3 thin tilms applicable to tunable microwave devices",

abstract = "We have heteroepitaxially deposited pure and TiO2-doped Ba 0.6Sr0.4TiO3(BST-0.4) films on (001)-oriented MgO substrates using pulsed-laser deposition. By optimizing microstructures, we have successfully increased the dielectric nonlinearity and decreased the dielectric loss of BST films. By inserting a very thin Ba1-xSr xTiO3 (x = 0.1-0.7) interlayer between the MgO substrate and the main layer of BST-0.4, we are able to manipulate strain states and dielectric properties of BST-0.4 films. In addition, we have systematically compared the dielectric properties of pure and TiO2-doped BST-0.4 films.",

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author = "Park, \{Bae Ho\} and Quanxi Jia",

year = "2002",

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doi = "10.1143/JJAP.41.7222",

language = "English",

volume = "41",

pages = "7222--7225",

journal = "Japanese Journal of Applied Physics",

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publisher = "Institute of Physics",

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T1 - Enhanced dielectric properties of (Ba,Sr)TiO3 thin tilms applicable to tunable microwave devices

AU - Park, Bae Ho

AU - Jia, Quanxi

PY - 2002/11

Y1 - 2002/11

N2 - We have heteroepitaxially deposited pure and TiO2-doped Ba 0.6Sr0.4TiO3(BST-0.4) films on (001)-oriented MgO substrates using pulsed-laser deposition. By optimizing microstructures, we have successfully increased the dielectric nonlinearity and decreased the dielectric loss of BST films. By inserting a very thin Ba1-xSr xTiO3 (x = 0.1-0.7) interlayer between the MgO substrate and the main layer of BST-0.4, we are able to manipulate strain states and dielectric properties of BST-0.4 films. In addition, we have systematically compared the dielectric properties of pure and TiO2-doped BST-0.4 films.

AB - We have heteroepitaxially deposited pure and TiO2-doped Ba 0.6Sr0.4TiO3(BST-0.4) films on (001)-oriented MgO substrates using pulsed-laser deposition. By optimizing microstructures, we have successfully increased the dielectric nonlinearity and decreased the dielectric loss of BST films. By inserting a very thin Ba1-xSr xTiO3 (x = 0.1-0.7) interlayer between the MgO substrate and the main layer of BST-0.4, we are able to manipulate strain states and dielectric properties of BST-0.4 films. In addition, we have systematically compared the dielectric properties of pure and TiO2-doped BST-0.4 films.

KW - BaSrTio

KW - Dielectric properties

KW - Microstructure

KW - Strain states

KW - TiO-doped

UR - https://www.scopus.com/pages/publications/2942650199

U2 - 10.1143/JJAP.41.7222

DO - 10.1143/JJAP.41.7222

M3 - Article

AN - SCOPUS:2942650199

SN - 0021-4922

VL - 41

SP - 7222

EP - 7225

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 11 B

ER -

Enhanced dielectric properties of (Ba,Sr)TiO₃ thin tilms applicable to tunable microwave devices

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Keywords

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