Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity

H. Y. Liu; I. R. Sellers; M. Hopkinson; C. N. Harrison; D. J. Mowbray; M. S. Skolnick

doi:10.1063/1.1622443

Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity

H. Y. Liu
, I. R. Sellers
, M. Hopkinson
, C. N. Harrison
, D. J. Mowbray
, M. S. Skolnick

Department of Electrical Engineering

University of Sheffield

Research output: Contribution to journal › Article › peer-review

42 Scopus citations

Abstract

A structure consisting of an InAlAs-GaAs SBL and an InAlAs-InGaAs SRL was used to improve the photoluminescence (PL) efficiency of 1.3-μm InAs/GaAs quantum dots (QDs). A strong enhancement of the PL efficiency above 200 K was observed with increasing the thickness of InAlAs SRL. For the sample with the thickness InAlAs cap layer, RT emission at 1.31 μm was obtained and the integrated PL intensity decreased by less than a factor of 2 between 78 and 299 K. This improvement resulted from increased confinement of carriers within the QDs.

Original language	English
Pages (from-to)	3716-3718
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	18
DOIs	https://doi.org/10.1063/1.1622443
State	Published - Nov 3 2003

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title = "Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity",

abstract = "A structure consisting of an InAlAs-GaAs SBL and an InAlAs-InGaAs SRL was used to improve the photoluminescence (PL) efficiency of 1.3-μm InAs/GaAs quantum dots (QDs). A strong enhancement of the PL efficiency above 200 K was observed with increasing the thickness of InAlAs SRL. For the sample with the thickness InAlAs cap layer, RT emission at 1.31 μm was obtained and the integrated PL intensity decreased by less than a factor of 2 between 78 and 299 K. This improvement resulted from increased confinement of carriers within the QDs.",

author = "Liu, \{H. Y.\} and Sellers, \{I. R.\} and M. Hopkinson and Harrison, \{C. N.\} and Mowbray, \{D. J.\} and Skolnick, \{M. S.\}",

year = "2003",

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doi = "10.1063/1.1622443",

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TY - JOUR

T1 - Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers

T2 - Enhancement of the high-temperature photoluminescence intensity

AU - Liu, H. Y.

AU - Sellers, I. R.

AU - Hopkinson, M.

AU - Harrison, C. N.

AU - Mowbray, D. J.

AU - Skolnick, M. S.

PY - 2003/11/3

Y1 - 2003/11/3

N2 - A structure consisting of an InAlAs-GaAs SBL and an InAlAs-InGaAs SRL was used to improve the photoluminescence (PL) efficiency of 1.3-μm InAs/GaAs quantum dots (QDs). A strong enhancement of the PL efficiency above 200 K was observed with increasing the thickness of InAlAs SRL. For the sample with the thickness InAlAs cap layer, RT emission at 1.31 μm was obtained and the integrated PL intensity decreased by less than a factor of 2 between 78 and 299 K. This improvement resulted from increased confinement of carriers within the QDs.

AB - A structure consisting of an InAlAs-GaAs SBL and an InAlAs-InGaAs SRL was used to improve the photoluminescence (PL) efficiency of 1.3-μm InAs/GaAs quantum dots (QDs). A strong enhancement of the PL efficiency above 200 K was observed with increasing the thickness of InAlAs SRL. For the sample with the thickness InAlAs cap layer, RT emission at 1.31 μm was obtained and the integrated PL intensity decreased by less than a factor of 2 between 78 and 299 K. This improvement resulted from increased confinement of carriers within the QDs.

UR - https://www.scopus.com/pages/publications/0345359908

U2 - 10.1063/1.1622443

DO - 10.1063/1.1622443

M3 - Article

AN - SCOPUS:0345359908

SN - 0003-6951

VL - 83

SP - 3716

EP - 3718

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Engineering carrier confinement potentials in 1.3-μm InAs/GaAs quantum dots with InAlAs layers: Enhancement of the high-temperature photoluminescence intensity

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