Skip to main navigation Skip to search Skip to main content

Energy dispersion relations for holes in silicon quantum wells and quantum wires

  • SUNY Buffalo
  • Swiss Federal Institute of Technology Zurich
  • Purdue University

Research output: Contribution to journalArticlepeer-review

Abstract

We calculate the energy dispersion relations in Si quantum wells (QW), E(k2D), and quantum wires (QWR), E(k1D), focusing on the regions with negative effective mass (NEM) in the valence band. The existence of such NEM regions is a necessary condition for the current oscillations in ballistic quasineutral plasma in semiconductor structures. The frequency range of such oscillations can be extended to the terahertz region by scaling down the length of structures. Our analysis shows that silicon is a promising material for prospective NEM-based terahertz wave generators. We also found that comparing to Si QWRs, Si QWs are preferable structures for NEM-based generation in the terahertz range.

Original languageEnglish
Pages (from-to)227-230
Number of pages4
JournalJournal of Computational Electronics
Volume6
Issue number1-3
DOIs
StatePublished - Sep 2007

Keywords

  • Energy dispersion relations
  • Negative effective mass
  • Quantum well
  • Quantum wire
  • Tight-binding model

Fingerprint

Dive into the research topics of 'Energy dispersion relations for holes in silicon quantum wells and quantum wires'. Together they form a unique fingerprint.

Cite this