Emitter-base design tradeoffs in 120GHZ sige HBTs

A. Joseph; X. Liu; P. Geiss; M. Slusser; W. Hodge; M. Dupuis; R. Wuthrich; J. Nakos; J. Dunn

Emitter-base design tradeoffs in 120GHZ sige HBTs

A. Joseph
, X. Liu
, P. Geiss
, M. Slusser
, W. Hodge
, M. Dupuis
, R. Wuthrich
, J. Nakos
, J. Dunn

Department of Chemical and Biological Engineering

Global Foundries, Inc.

Research output: Contribution to conference › Paper › peer-review

Abstract

We present a detailed study on the tradeoffs in emitter-base profile optimization for a 120GHz SiGe HBT. The influence of two key process variables on the HBT electrical characteristics were investigated. Results indicate that careful optimization of the emitter-base profile will be required to achieve critical HBT performance parameters. The impact of these process variables to the low frequency noise characteristics have been compared as well. 1/f noise reduction can be achieved by optimizing the emitter doping concentration.

Original language	English
Pages	45-51
Number of pages	7
State	Published - 2004
Event	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004

Conference

Conference	SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium
Country/Territory	United States
City	Honolulu, HI
Period	10/3/04 → 10/8/04

Cite this

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title = "Emitter-base design tradeoffs in 120GHZ sige HBTs",

abstract = "We present a detailed study on the tradeoffs in emitter-base profile optimization for a 120GHz SiGe HBT. The influence of two key process variables on the HBT electrical characteristics were investigated. Results indicate that careful optimization of the emitter-base profile will be required to achieve critical HBT performance parameters. The impact of these process variables to the low frequency noise characteristics have been compared as well. 1/f noise reduction can be achieved by optimizing the emitter doping concentration.",

author = "A. Joseph and X. Liu and P. Geiss and M. Slusser and W. Hodge and M. Dupuis and R. Wuthrich and J. Nakos and J. Dunn",

year = "2004",

language = "English",

pages = "45--51",

note = "SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium ; Conference date: 03-10-2004 Through 08-10-2004",

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TY - CONF

T1 - Emitter-base design tradeoffs in 120GHZ sige HBTs

AU - Joseph, A.

AU - Liu, X.

AU - Geiss, P.

AU - Slusser, M.

AU - Hodge, W.

AU - Dupuis, M.

AU - Wuthrich, R.

AU - Nakos, J.

AU - Dunn, J.

PY - 2004

Y1 - 2004

N2 - We present a detailed study on the tradeoffs in emitter-base profile optimization for a 120GHz SiGe HBT. The influence of two key process variables on the HBT electrical characteristics were investigated. Results indicate that careful optimization of the emitter-base profile will be required to achieve critical HBT performance parameters. The impact of these process variables to the low frequency noise characteristics have been compared as well. 1/f noise reduction can be achieved by optimizing the emitter doping concentration.

AB - We present a detailed study on the tradeoffs in emitter-base profile optimization for a 120GHz SiGe HBT. The influence of two key process variables on the HBT electrical characteristics were investigated. Results indicate that careful optimization of the emitter-base profile will be required to achieve critical HBT performance parameters. The impact of these process variables to the low frequency noise characteristics have been compared as well. 1/f noise reduction can be achieved by optimizing the emitter doping concentration.

UR - https://www.scopus.com/pages/publications/17044411776

M3 - Paper

AN - SCOPUS:17044411776

SP - 45

EP - 51

T2 - SiGe: Materials, Processing, and Devices - Proceedings of the First Symposium

Y2 - 3 October 2004 through 8 October 2004

ER -

Emitter-base design tradeoffs in 120GHZ sige HBTs

Abstract

Conference

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