Electronics device application of fullerene nanowhiskers

Yuichi Ochiai; Nobuyuki Aoki; Jonathan Paul Bird

doi:10.4032/9789814241632

Electronics device application of fullerene nanowhiskers

Yuichi Ochiai
, Nobuyuki Aoki
, Jonathan Paul Bird

Department of Electrical Engineering

Chiba University

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

C₆₀ fullerene nanowhiskers (FNWs) have been investigated for electronics device applications. Nanofabrication for C₆₀ FNWs has been developed for device manufacturing based on simple synthesis and semiconductor microprocessing of C₆₀. Several kinds of disadvantages, including carrier suppression, were overcome under the control of the device structure. Electrical transport is explained and the device working characteristics of the field-effect transistor are also discussed.

Original language	English
Title of host publication	Fullerene Nanowhiskers
Publisher	Pan Stanford Publishing Pte. Ltd.
Pages	209-228
Number of pages	20
ISBN (Print)	9789814241854
DOIs	https://doi.org/10.4032/9789814241632
State	Published - Sep 30 2011

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title = "Electronics device application of fullerene nanowhiskers",

abstract = "C60 fullerene nanowhiskers (FNWs) have been investigated for electronics device applications. Nanofabrication for C60 FNWs has been developed for device manufacturing based on simple synthesis and semiconductor microprocessing of C60. Several kinds of disadvantages, including carrier suppression, were overcome under the control of the device structure. Electrical transport is explained and the device working characteristics of the field-effect transistor are also discussed.",

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N2 - C60 fullerene nanowhiskers (FNWs) have been investigated for electronics device applications. Nanofabrication for C60 FNWs has been developed for device manufacturing based on simple synthesis and semiconductor microprocessing of C60. Several kinds of disadvantages, including carrier suppression, were overcome under the control of the device structure. Electrical transport is explained and the device working characteristics of the field-effect transistor are also discussed.

AB - C60 fullerene nanowhiskers (FNWs) have been investigated for electronics device applications. Nanofabrication for C60 FNWs has been developed for device manufacturing based on simple synthesis and semiconductor microprocessing of C60. Several kinds of disadvantages, including carrier suppression, were overcome under the control of the device structure. Electrical transport is explained and the device working characteristics of the field-effect transistor are also discussed.

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DO - 10.4032/9789814241632

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BT - Fullerene Nanowhiskers

PB - Pan Stanford Publishing Pte. Ltd.

ER -

Electronics device application of fullerene nanowhiskers

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