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Electronic excitations and optical properties of YbFe 2 O 4 thin films

  • R. C. Rai
  • , J. Hinz
  • , M. Pascolini
  • , F. Sun
  • , H. Zeng
  • Buffalo State College, State University of New York
  • SUNY Buffalo

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We present the structural, optical properties, and electronic excitation spectra of the YbFe 2 O 4 thin film deposited on (0001) sapphire substrates. The optical spectra of a YbFe 2 O 4 thin film show several electronic transitions, dominated by Fe d to d on-site electronic transitions as well as O 2p to Fe 3d, Yb 6s, and Yb 5d charge-transfer electronic transitions. The direct energy band gap of YbFe 2 O 4 has been found to be 1.40 ± 0.01 eV at 300 K. Moreover, the electronic transitions centered at 1.75 eV and 2.41 eV exhibit strong temperature dependence with a discontinuity at ∼190 ± 10 K, indicating evidence for a structural instability in the system. The optical spectra of YbFe 2 O 4 have been analyzed and also compared with that of isostructural YFe 2 O 4 and LuFe 2 O 4 .

Original languageEnglish
Pages (from-to)57-61
Number of pages5
JournalThin Solid Films
Volume673
DOIs
StatePublished - Mar 1 2019

Keywords

  • Band gap
  • Electronic excitation
  • Thin film
  • Ytterbium ferrite

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