Electron transport properties in photo and supersonic wave irradiated C60 fullerene nano-whisker field-effect transistors

Tatsuya Doi; Kyouhei Koyama; Yasuto Chiba; Hajime Tsuji; Misaki Ueno; Shih Ren Chen; Nobuyuki Aoki; Jonathan Paul Bird; Yuichi Ochiai

doi:10.1143/JJAP.49.04DN12

Electron transport properties in photo and supersonic wave irradiated C₆₀ fullerene nano-whisker field-effect transistors

Tatsuya Doi
, Kyouhei Koyama
, Yasuto Chiba
, Hajime Tsuji
, Misaki Ueno
, Shih Ren Chen
, Nobuyuki Aoki
, Jonathan Paul Bird
, Yuichi Ochiai

Department of Electrical Engineering

Chiba University
Southern Taiwan University of Science and Technology

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We have investigated the irradiation effect of ultraviolet light (UV) and supersonic wave (SW) into fullerene nano-whisker (FNW) field-effect transistors (FET). FNW has been fabricated by liquid/liquid interfacial precipitation using a system of C₆₀-saturated m-xylene and isopropyl alcohol. And the morphology of FNW has been observed by a scanning electron microscope. The UV irradiation effect of FNW-FET in vacuum was observed that field effect mobility reduced from 10^-2 to 10^-3 cm² V^-1 s^-1. Also, SW irradiation in solution, the FNW-FET shows a large increase on/off ratio from 10 to 1000. There exists a clear improvement in FET performance by use of both UV and SW irradiation for FNW. Also, the effect of exposure in air has been discussed on their FET performance.

Original language	English
Article number	04DN12
Journal	Japanese Journal of Applied Physics
Volume	49
Issue number	4 PART 2
DOIs	https://doi.org/10.1143/JJAP.49.04DN12
State	Published - Apr 2010

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title = "Electron transport properties in photo and supersonic wave irradiated C60 fullerene nano-whisker field-effect transistors",

abstract = "We have investigated the irradiation effect of ultraviolet light (UV) and supersonic wave (SW) into fullerene nano-whisker (FNW) field-effect transistors (FET). FNW has been fabricated by liquid/liquid interfacial precipitation using a system of C60-saturated m-xylene and isopropyl alcohol. And the morphology of FNW has been observed by a scanning electron microscope. The UV irradiation effect of FNW-FET in vacuum was observed that field effect mobility reduced from 10-2 to 10-3 cm2 V-1 s-1. Also, SW irradiation in solution, the FNW-FET shows a large increase on/off ratio from 10 to 1000. There exists a clear improvement in FET performance by use of both UV and SW irradiation for FNW. Also, the effect of exposure in air has been discussed on their FET performance.",

author = "Tatsuya Doi and Kyouhei Koyama and Yasuto Chiba and Hajime Tsuji and Misaki Ueno and Chen, \{Shih Ren\} and Nobuyuki Aoki and Bird, \{Jonathan Paul\} and Yuichi Ochiai",

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doi = "10.1143/JJAP.49.04DN12",

language = "English",

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T1 - Electron transport properties in photo and supersonic wave irradiated C60 fullerene nano-whisker field-effect transistors

AU - Doi, Tatsuya

AU - Koyama, Kyouhei

AU - Chiba, Yasuto

AU - Tsuji, Hajime

AU - Ueno, Misaki

AU - Chen, Shih Ren

AU - Aoki, Nobuyuki

AU - Bird, Jonathan Paul

AU - Ochiai, Yuichi

PY - 2010/4

Y1 - 2010/4

N2 - We have investigated the irradiation effect of ultraviolet light (UV) and supersonic wave (SW) into fullerene nano-whisker (FNW) field-effect transistors (FET). FNW has been fabricated by liquid/liquid interfacial precipitation using a system of C60-saturated m-xylene and isopropyl alcohol. And the morphology of FNW has been observed by a scanning electron microscope. The UV irradiation effect of FNW-FET in vacuum was observed that field effect mobility reduced from 10-2 to 10-3 cm2 V-1 s-1. Also, SW irradiation in solution, the FNW-FET shows a large increase on/off ratio from 10 to 1000. There exists a clear improvement in FET performance by use of both UV and SW irradiation for FNW. Also, the effect of exposure in air has been discussed on their FET performance.

AB - We have investigated the irradiation effect of ultraviolet light (UV) and supersonic wave (SW) into fullerene nano-whisker (FNW) field-effect transistors (FET). FNW has been fabricated by liquid/liquid interfacial precipitation using a system of C60-saturated m-xylene and isopropyl alcohol. And the morphology of FNW has been observed by a scanning electron microscope. The UV irradiation effect of FNW-FET in vacuum was observed that field effect mobility reduced from 10-2 to 10-3 cm2 V-1 s-1. Also, SW irradiation in solution, the FNW-FET shows a large increase on/off ratio from 10 to 1000. There exists a clear improvement in FET performance by use of both UV and SW irradiation for FNW. Also, the effect of exposure in air has been discussed on their FET performance.

UR - https://www.scopus.com/pages/publications/77952693530

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DO - 10.1143/JJAP.49.04DN12

M3 - Article

AN - SCOPUS:77952693530

SN - 0021-4922

VL - 49

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 4 PART 2

M1 - 04DN12

ER -

Electron transport properties in photo and supersonic wave irradiated C₆₀ fullerene nano-whisker field-effect transistors

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