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Electron-phonon scattering in disordered metallic films

  • A. Sergeev
  • , B. S. Karasik
  • , M. Gershenson
  • , V. Mitin
  • Wayne State University
  • Jet Propulsion Laboratory, California Institute of Technology
  • Rutgers - The State University of New Jersey, New Brunswick

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The quantum interference between 'pure' electron-phonon and electron-boundary/impurity scattering drastically changes the electron-phonon relaxation rate. If impurities and boundaries vibrate in the same way as the host lattice, the electron-phonon relaxation rate is significantly decreased. In the presence of the scattering potential that does not vibrate with phonons (e.g. rigid boundaries, interelectron scattering) the relaxation rate is substantially enhanced. Current work reviews recent progress in the theoretical investigations, gives quantitative explanations of available low-temperature data, and presents original experimental results for ultrathin Hf at ultralow temperatures.

Original languageEnglish
Pages (from-to)328-330
Number of pages3
JournalPhysica B: Condensed Matter
Volume316-317
DOIs
StatePublished - May 2002

Keywords

  • Disorder
  • Electron-phonon interaction

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