Electron-optical-phonon interaction in semiconductor multiple-quantum-well structures

Y. H. Chang; B. D. McCombe; J. M. Mercy; A. A. Reeder; J. Ralston; G. A. Wicks

doi:10.1103/PhysRevLett.61.1408

Electron-optical-phonon interaction in semiconductor multiple-quantum-well structures

Y. H. Chang
, B. D. McCombe
, J. M. Mercy
, A. A. Reeder
, J. Ralston
, G. A. Wicks

Physics

SUNY Buffalo
Cornell University

Research output: Contribution to journal › Article › peer-review

52 Scopus citations

Abstract

The 1s-2p(m=+1) hydrogenic transition in magnetic fields up to 20 T for shallow donor impurities confined in 138- GaAs wells in AlGaAs/GaAs multiple-quantum-well structures has been used to investigate the electron-optical-phonon interaction. A resonant "pinning" behavior has been observed at energies well below (50 cm-1) that of the long-wavelength optical phonons of GaAs. It is suggested that these surprising results may be explained by interaction with near-zone-boundary longitudinal-optical phonons activated by the superlattice.

Original language	English
Pages (from-to)	1408-1411
Number of pages	4
Journal	Physical Review Letters
Volume	61
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevLett.61.1408
State	Published - 1988

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title = "Electron-optical-phonon interaction in semiconductor multiple-quantum-well structures",

abstract = "The 1s-2p(m=+1) hydrogenic transition in magnetic fields up to 20 T for shallow donor impurities confined in 138- GaAs wells in AlGaAs/GaAs multiple-quantum-well structures has been used to investigate the electron-optical-phonon interaction. A resonant {"}pinning{"} behavior has been observed at energies well below (50 cm-1) that of the long-wavelength optical phonons of GaAs. It is suggested that these surprising results may be explained by interaction with near-zone-boundary longitudinal-optical phonons activated by the superlattice.",

author = "Chang, \{Y. H.\} and McCombe, \{B. D.\} and Mercy, \{J. M.\} and Reeder, \{A. A.\} and J. Ralston and Wicks, \{G. A.\}",

year = "1988",

doi = "10.1103/PhysRevLett.61.1408",

language = "English",

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pages = "1408--1411",

journal = "Physical Review Letters",

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T1 - Electron-optical-phonon interaction in semiconductor multiple-quantum-well structures

AU - Chang, Y. H.

AU - McCombe, B. D.

AU - Mercy, J. M.

AU - Reeder, A. A.

AU - Ralston, J.

AU - Wicks, G. A.

PY - 1988

Y1 - 1988

N2 - The 1s-2p(m=+1) hydrogenic transition in magnetic fields up to 20 T for shallow donor impurities confined in 138- GaAs wells in AlGaAs/GaAs multiple-quantum-well structures has been used to investigate the electron-optical-phonon interaction. A resonant "pinning" behavior has been observed at energies well below (50 cm-1) that of the long-wavelength optical phonons of GaAs. It is suggested that these surprising results may be explained by interaction with near-zone-boundary longitudinal-optical phonons activated by the superlattice.

AB - The 1s-2p(m=+1) hydrogenic transition in magnetic fields up to 20 T for shallow donor impurities confined in 138- GaAs wells in AlGaAs/GaAs multiple-quantum-well structures has been used to investigate the electron-optical-phonon interaction. A resonant "pinning" behavior has been observed at energies well below (50 cm-1) that of the long-wavelength optical phonons of GaAs. It is suggested that these surprising results may be explained by interaction with near-zone-boundary longitudinal-optical phonons activated by the superlattice.

UR - https://www.scopus.com/pages/publications/4243420486

U2 - 10.1103/PhysRevLett.61.1408

DO - 10.1103/PhysRevLett.61.1408

M3 - Article

AN - SCOPUS:4243420486

SN - 0031-9007

VL - 61

SP - 1408

EP - 1411

JO - Physical Review Letters

JF - Physical Review Letters

IS - 12

ER -

Electron-optical-phonon interaction in semiconductor multiple-quantum-well structures

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