Electron diffraction study of defects at a semiconductor heterostructure interface

Krishna Rajan

doi:10.1063/1.104663

Electron diffraction study of defects at a semiconductor heterostructure interface

Krishna Rajan

Department of Materials Design and Innovation

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Interface dislocation periodicity at a Ge/Si interface is studied using electron diffraction. Relaxation effects due to these defects, normal to the interface, are measured.

Original language	English
Pages (from-to)	287-288
Number of pages	2
Journal	Applied Physics Letters
Volume	58
Issue number	3
DOIs	https://doi.org/10.1063/1.104663
State	Published - 1991

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title = "Electron diffraction study of defects at a semiconductor heterostructure interface",

abstract = "Interface dislocation periodicity at a Ge/Si interface is studied using electron diffraction. Relaxation effects due to these defects, normal to the interface, are measured.",

author = "Krishna Rajan",

year = "1991",

doi = "10.1063/1.104663",

language = "English",

volume = "58",

pages = "287--288",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "3",

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T1 - Electron diffraction study of defects at a semiconductor heterostructure interface

AU - Rajan, Krishna

PY - 1991

Y1 - 1991

N2 - Interface dislocation periodicity at a Ge/Si interface is studied using electron diffraction. Relaxation effects due to these defects, normal to the interface, are measured.

AB - Interface dislocation periodicity at a Ge/Si interface is studied using electron diffraction. Relaxation effects due to these defects, normal to the interface, are measured.

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U2 - 10.1063/1.104663

DO - 10.1063/1.104663

M3 - Article

AN - SCOPUS:36449008117

SN - 0003-6951

VL - 58

SP - 287

EP - 288

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

ER -

Electron diffraction study of defects at a semiconductor heterostructure interface

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