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Electromigration time to failure of SnAgCuNi solder joints

  • SUNY Buffalo
  • STMicroelectronics

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

Electromigration time to failure and electrical resistivity of 95.5%Sn-1.5%Ag-0.5%Cu-0.03W%Ni microelectronics solder joints have been investigated experimentally. A Black-type electromigration time to failure equation is developed to describe the time to failure versus current density and temperature. It is observed that resistance of a solder joint is not just a function of the temperature but also a function of the current density. The activation energy over the range of 83-174 °C is measured to be 0.77±0.12 eV, and the current density exponent is found to be (8.60±1.65). It is also shown that the most commonly used Black's electromigration time to failure equation cannot be used for solder joints.

Original languageEnglish
Article number013707
JournalJournal of Applied Physics
Volume106
Issue number1
DOIs
StatePublished - 2009

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