Abstract
Electromigration is a major road block in the pursuit of further miniaturized electronics. In the next generation micro and sub micro electronics current density is expected to exceed 107 A/cm 2. In this paper an electromigration induced strain-current density model is proposed and implemented in finite element procedure for solution of boundary/initial value electromigration problems. Numerical simulations are compared with experimental data. Comparisons validate the model.
| Original language | English |
|---|---|
| Pages (from-to) | 82-98 |
| Number of pages | 17 |
| Journal | Computational Materials Science |
| Volume | 34 |
| Issue number | 1 |
| DOIs | |
| State | Published - Aug 2005 |
Keywords
- Electromigration
- Nanoelectronics packaging
- Power electronics packaging
- Solder joint
- Thermomigration
- Viscoplasticity
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