Abstract
Electromigration is a major road block on the way to realization of nanoelectronics. Determination of plastic deformation under high current density is critical for prediction of electromigration failure. A new displacement-diffusion coupled model is proposed and implemented using finite element method. The model takes into account viscoplastic behavior of solder alloys, as a result, vacancy concentration evolution and electromigration process are accurately simulated. Finite element simulations were performed for lead-free solder joints under high current density and compared with experimental moiré interferometry measurements. The comparison validates the model.
| Original language | English |
|---|---|
| Pages (from-to) | 4909-4924 |
| Number of pages | 16 |
| Journal | International Journal of Solids and Structures |
| Volume | 44 |
| Issue number | 14-15 |
| DOIs | |
| State | Published - Jul 2007 |
Keywords
- Current crowding
- Electromigration
- Finite element method
- Nanoelectronics packaging
- Thermomigration
- Viscoplasticity
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