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Electroluminescence from a GaAs/AlGaAs heterostructure at high electric fields: Evidence for Real- & k-Space transfer

  • Weilu Gao
  • , Xuan Wang
  • , Rui Chen
  • , Gottfried Strasser
  • , Jonathan P. Bird
  • , Junichiro Kono
  • Rice University
  • SUNY Buffalo
  • TU Wien

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We study impact-ionization-induced electroluminescence (EL) from a GaAs/AlGaAs heterostructure under high bias. In addition to k-space transfer (the Gunn effect), EL spectra indicate real-space (GaAs-to-AlGaAs) transfer. Microscopy shows strong EL near the anode.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationQELS_Fundamental Science, CLEO_QELS 2014
PublisherOptical Society of America (OSA)
ISBN (Print)9781557529992, 9781557529992
DOIs
StatePublished - 2014
EventCLEO: QELS_Fundamental Science, CLEO_QELS 2014 - San Jose, CA, United States
Duration: Jun 8 2014Jun 13 2014

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceCLEO: QELS_Fundamental Science, CLEO_QELS 2014
Country/TerritoryUnited States
CitySan Jose, CA
Period06/8/1406/13/14

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