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Electroluminescence from a GaAs/AlGaAs heterostructure at high electric fields: Evidence for real- & k-space transfer

  • Weilu Gao
  • , Xuan Wang
  • , Rui Chen
  • , Gottfried Strasser
  • , Jonathan P. Bird
  • , Junichiro Kono
  • Rice University
  • SUNY Buffalo
  • TU Wien

Research output: Contribution to conferencePaperpeer-review

Abstract

We study impact-ionization-induced electroluminescence (EL) from a GaAs/AlGaAs heterostructure under high bias. In addition to k-space transfer (the Gunn effect), EL spectra indicate real-space (GaAs-to-AlGaAs) transfer. Microscopy shows strong EL near the anode.

Original languageEnglish
StatePublished - 2014
Event2014 Conference on Lasers and Electro-Optics, CLEO 2014 - San Jose, United States
Duration: Jun 8 2014Jun 13 2014

Conference

Conference2014 Conference on Lasers and Electro-Optics, CLEO 2014
Country/TerritoryUnited States
CitySan Jose
Period06/8/1406/13/14

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