Electroforming-Free HfO2:CeO2 Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response

Hongyi Dou; Xingyao Gao; Di Zhang; Samyak Dhole; Zhimin Qi; Bo Yang; Md Nazmul Hasan; Jung Hun Seo; Quanxi Jia; Markus Hellenbrand; Judith L. MacManus-Driscoll; Xinghang Zhang; Haiyan Wang

doi:10.1021/acsaelm.1c00791

Electroforming-Free HfO₂:CeO₂ Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response

Hongyi Dou
, Xingyao Gao
, Di Zhang
, Samyak Dhole
, Zhimin Qi
, Bo Yang
, Md Nazmul Hasan
, Jung Hun Seo
, Quanxi Jia
, Markus Hellenbrand
, Judith L. MacManus-Driscoll
, Xinghang Zhang
, Haiyan Wang

Department of Materials Design and Innovation

Purdue University
SUNY Buffalo
University of Cambridge

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Resistive switching and anisotropic optical properties have been investigated in two-phase HfO₂:CeO₂ nanocomposite thin films of different HfO₂:CeO₂ ratios of 3:1, 1:1, and 1:3 on single-crystalline SrTiO₃(001) substrates. Vertically aligned nanocomposite (VAN) thin films with CeO₂ pillars embedded in a HfO₂ matrix have been obtained using a one-step pulsed laser deposition technique. By adjusting the molar ratio of HfO₂ and CeO₂ in the films, the resistive switching effect and the anisotropic dielectric response were tuned and correlated with the density of the conducting vertical-phase boundaries. It is shown that only HfO₂:CeO₂ VAN films of 1:1 composition give rise to a forming-free switching system as they have clear vertical boundaries that guide oxygen vacancy channels. These films show strong promise for resistive switching memory devices.

Original language	English
Pages (from-to)	5278-5286
Number of pages	9
Journal	ACS Applied Electronic Materials
Volume	3
Issue number	12
DOIs	https://doi.org/10.1021/acsaelm.1c00791
State	Published - Dec 28 2021

Keywords

anisotropy
CeO
electroforming free
HfO
oxygen vacancies
resistive switching
vertically aligned nanocomposite (VAN)

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10.1021/acsaelm.1c00791

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title = "Electroforming-Free HfO2:CeO2 Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response",

abstract = "Resistive switching and anisotropic optical properties have been investigated in two-phase HfO2:CeO2 nanocomposite thin films of different HfO2:CeO2 ratios of 3:1, 1:1, and 1:3 on single-crystalline SrTiO3(001) substrates. Vertically aligned nanocomposite (VAN) thin films with CeO2 pillars embedded in a HfO2 matrix have been obtained using a one-step pulsed laser deposition technique. By adjusting the molar ratio of HfO2 and CeO2 in the films, the resistive switching effect and the anisotropic dielectric response were tuned and correlated with the density of the conducting vertical-phase boundaries. It is shown that only HfO2:CeO2 VAN films of 1:1 composition give rise to a forming-free switching system as they have clear vertical boundaries that guide oxygen vacancy channels. These films show strong promise for resistive switching memory devices.",

keywords = "anisotropy, CeO, electroforming free, HfO, oxygen vacancies, resistive switching, vertically aligned nanocomposite (VAN)",

author = "Hongyi Dou and Xingyao Gao and Di Zhang and Samyak Dhole and Zhimin Qi and Bo Yang and Hasan, \{Md Nazmul\} and Seo, \{Jung Hun\} and Quanxi Jia and Markus Hellenbrand and MacManus-Driscoll, \{Judith L.\} and Xinghang Zhang and Haiyan Wang",

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doi = "10.1021/acsaelm.1c00791",

language = "English",

volume = "3",

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journal = "ACS Applied Electronic Materials",

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T1 - Electroforming-Free HfO2:CeO2 Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response

AU - Dou, Hongyi

AU - Gao, Xingyao

AU - Zhang, Di

AU - Dhole, Samyak

AU - Qi, Zhimin

AU - Yang, Bo

AU - Hasan, Md Nazmul

AU - Seo, Jung Hun

AU - Jia, Quanxi

AU - Hellenbrand, Markus

AU - MacManus-Driscoll, Judith L.

AU - Zhang, Xinghang

AU - Wang, Haiyan

PY - 2021/12/28

Y1 - 2021/12/28

N2 - Resistive switching and anisotropic optical properties have been investigated in two-phase HfO2:CeO2 nanocomposite thin films of different HfO2:CeO2 ratios of 3:1, 1:1, and 1:3 on single-crystalline SrTiO3(001) substrates. Vertically aligned nanocomposite (VAN) thin films with CeO2 pillars embedded in a HfO2 matrix have been obtained using a one-step pulsed laser deposition technique. By adjusting the molar ratio of HfO2 and CeO2 in the films, the resistive switching effect and the anisotropic dielectric response were tuned and correlated with the density of the conducting vertical-phase boundaries. It is shown that only HfO2:CeO2 VAN films of 1:1 composition give rise to a forming-free switching system as they have clear vertical boundaries that guide oxygen vacancy channels. These films show strong promise for resistive switching memory devices.

AB - Resistive switching and anisotropic optical properties have been investigated in two-phase HfO2:CeO2 nanocomposite thin films of different HfO2:CeO2 ratios of 3:1, 1:1, and 1:3 on single-crystalline SrTiO3(001) substrates. Vertically aligned nanocomposite (VAN) thin films with CeO2 pillars embedded in a HfO2 matrix have been obtained using a one-step pulsed laser deposition technique. By adjusting the molar ratio of HfO2 and CeO2 in the films, the resistive switching effect and the anisotropic dielectric response were tuned and correlated with the density of the conducting vertical-phase boundaries. It is shown that only HfO2:CeO2 VAN films of 1:1 composition give rise to a forming-free switching system as they have clear vertical boundaries that guide oxygen vacancy channels. These films show strong promise for resistive switching memory devices.

KW - anisotropy

KW - CeO

KW - electroforming free

KW - HfO

KW - oxygen vacancies

KW - resistive switching

KW - vertically aligned nanocomposite (VAN)

UR - https://www.scopus.com/pages/publications/85120352048

U2 - 10.1021/acsaelm.1c00791

DO - 10.1021/acsaelm.1c00791

M3 - Article

AN - SCOPUS:85120352048

SN - 2637-6113

VL - 3

SP - 5278

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JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 12

ER -

Electroforming-Free HfO₂:CeO₂ Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response

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Keywords

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