@inproceedings{eb421c7eff1c42e599e913d04d62f65b,
title = "Electrically switchable graphene photo-sensor using phase-change gate filter for non-volatile data storage application with high-speed data writing and access",
abstract = "An electrically switchable graphene photo-sensor (SGPS) is proposed for multiple functional applications. SGPS is a dual-gate thin-film transistor with a graphene channel and a phase-change chalcogenide (GeSbTe) gate filter. This gate filter is switchable between the amorphous (optically transparent) and crystalline (optically non-transparent) phases by applying the gate biases. When the gate filter is switched to the amorphous/crystalline (a/c) phases, the SGPS will/not yield photo-current (I pc) under a constant light source. By detecting the presence of I pc, two data states can be read out so as to accomplish non-volatile data storage. SGPS can present a switching speed of ∼50 ns between the a/c phases of GeSbTe and a data access speed as fast as 10 ns. SGPS shows very good 10-year data retention at 85°C and good endurance of >10 6 switching cycles between the a/c phases of the GeSbTe gate filter.",
author = "Gang Zhang and Shen, \{Tian Zi\} and Li, \{Hua Min\} and Lee, \{Dae Yeong\} and Ra, \{Chang Ho\} and Yoo, \{Won Jong\}",
year = "2011",
doi = "10.1109/IEDM.2011.6131476",
language = "English",
isbn = "9781457705052",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "2.5.1--2.5.4",
booktitle = "2011 International Electron Devices Meeting, IEDM 2011",
note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",
}