Electrical spin injection from a magnetic Schottky tunnel contact into a semiconductor

B. T. Jonker; A. T. Hanbicki; G. Itskos; G. Kioseoglou; A. Petrou

doi:10.1109/INTMAG.2002.1001247

Electrical spin injection from a magnetic Schottky tunnel contact into a semiconductor

B. T. Jonker
, A. T. Hanbicki
, G. Itskos
, G. Kioseoglou
, A. Petrou

Physics

Naval Research Laboratory
SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We describe how a ferromagnetic metal employed as a conventional Schottky barrier contact provides a practical and robust means of injecting spin-polarized carriers into a semiconductor device heterostructure, with spin injection efficiencies of 30 % extending to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine in an AlGaAs/GaAs quantum well, emitting circularly polarized light, and the quantum selection rules which relate the optical and carrier spin polarizations provide a quantitative, model-independent measure of spin injection efficiency. Electroluminescence spectra from an Fe/AlGaAs/GaAs spin-LED exhibit significant circular polarization. The temperature dependence of the optical polarization and corresponding spin injection efficiency are determined. These results demonstrate that spin injecting contacts can be formed using a widely employed contact methodology, providing a ready pathway for the integration for spin transport into semiconductor processing technology.

Original language	English
Title of host publication	INTERMAG Europe 2002 - IEEE International Magnetics Conference
Editors	J. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, Jo De Boeck, R. Wood
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	0780373650, 9780780373655
DOIs	https://doi.org/10.1109/INTMAG.2002.1001247
State	Published - 2002
Event	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - Amsterdam, Netherlands Duration: Apr 28 2002 → May 2 2002

Publication series

Name	INTERMAG Europe 2002 - IEEE International Magnetics Conference

Conference

Conference	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
Country/Territory	Netherlands
City	Amsterdam
Period	04/28/02 → 05/2/02

Access to Document

10.1109/INTMAG.2002.1001247

Cite this

Jonker, B. T., Hanbicki, A. T., Itskos, G., Kioseoglou, G., & Petrou, A. (2002). Electrical spin injection from a magnetic Schottky tunnel contact into a semiconductor. In J. Fidler, B. Hillebrands, C. Ross, D. Weller, L. Folks, E. Hill, M. Vazquez Villalabeitia, J. A. Bain, J. De Boeck, & R. Wood (Eds.), INTERMAG Europe 2002 - IEEE International Magnetics Conference Article 1001247 (INTERMAG Europe 2002 - IEEE International Magnetics Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INTMAG.2002.1001247

Jonker, B. T. ; Hanbicki, A. T. ; Itskos, G. et al. / Electrical spin injection from a magnetic Schottky tunnel contact into a semiconductor. INTERMAG Europe 2002 - IEEE International Magnetics Conference. editor / J. Fidler ; B. Hillebrands ; C. Ross ; D. Weller ; L. Folks ; E. Hill ; M. Vazquez Villalabeitia ; J. A. Bain ; Jo De Boeck ; R. Wood. Institute of Electrical and Electronics Engineers Inc., 2002. (INTERMAG Europe 2002 - IEEE International Magnetics Conference).

@inproceedings{6bb66c1732994864918d495f6eb26102,

title = "Electrical spin injection from a magnetic Schottky tunnel contact into a semiconductor",

abstract = "We describe how a ferromagnetic metal employed as a conventional Schottky barrier contact provides a practical and robust means of injecting spin-polarized carriers into a semiconductor device heterostructure, with spin injection efficiencies of 30 \% extending to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine in an AlGaAs/GaAs quantum well, emitting circularly polarized light, and the quantum selection rules which relate the optical and carrier spin polarizations provide a quantitative, model-independent measure of spin injection efficiency. Electroluminescence spectra from an Fe/AlGaAs/GaAs spin-LED exhibit significant circular polarization. The temperature dependence of the optical polarization and corresponding spin injection efficiency are determined. These results demonstrate that spin injecting contacts can be formed using a widely employed contact methodology, providing a ready pathway for the integration for spin transport into semiconductor processing technology.",

author = "Jonker, \{B. T.\} and Hanbicki, \{A. T.\} and G. Itskos and G. Kioseoglou and A. Petrou",

note = "Publisher Copyright: {\textcopyright}2002 IEEE.; 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 ; Conference date: 28-04-2002 Through 02-05-2002",

year = "2002",

doi = "10.1109/INTMAG.2002.1001247",

language = "English",

series = "INTERMAG Europe 2002 - IEEE International Magnetics Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

editor = "J. Fidler and B. Hillebrands and C. Ross and D. Weller and L. Folks and E. Hill and \{Vazquez Villalabeitia\}, M. and Bain, \{J. A.\} and \{De Boeck\}, Jo and R. Wood",

booktitle = "INTERMAG Europe 2002 - IEEE International Magnetics Conference",

address = "United States",

}

Jonker, BT, Hanbicki, AT, Itskos, G, Kioseoglou, G & Petrou, A 2002, Electrical spin injection from a magnetic Schottky tunnel contact into a semiconductor. in J Fidler, B Hillebrands, C Ross, D Weller, L Folks, E Hill, M Vazquez Villalabeitia, JA Bain, J De Boeck & R Wood (eds), INTERMAG Europe 2002 - IEEE International Magnetics Conference., 1001247, INTERMAG Europe 2002 - IEEE International Magnetics Conference, Institute of Electrical and Electronics Engineers Inc., 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002, Amsterdam, Netherlands, 04/28/02. https://doi.org/10.1109/INTMAG.2002.1001247

Electrical spin injection from a magnetic Schottky tunnel contact into a semiconductor. / Jonker, B. T.; Hanbicki, A. T.; Itskos, G. et al.
INTERMAG Europe 2002 - IEEE International Magnetics Conference. ed. / J. Fidler; B. Hillebrands; C. Ross; D. Weller; L. Folks; E. Hill; M. Vazquez Villalabeitia; J. A. Bain; Jo De Boeck; R. Wood. Institute of Electrical and Electronics Engineers Inc., 2002. 1001247 (INTERMAG Europe 2002 - IEEE International Magnetics Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Electrical spin injection from a magnetic Schottky tunnel contact into a semiconductor

AU - Jonker, B. T.

AU - Hanbicki, A. T.

AU - Itskos, G.

AU - Kioseoglou, G.

AU - Petrou, A.

PY - 2002

Y1 - 2002

N2 - We describe how a ferromagnetic metal employed as a conventional Schottky barrier contact provides a practical and robust means of injecting spin-polarized carriers into a semiconductor device heterostructure, with spin injection efficiencies of 30 % extending to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine in an AlGaAs/GaAs quantum well, emitting circularly polarized light, and the quantum selection rules which relate the optical and carrier spin polarizations provide a quantitative, model-independent measure of spin injection efficiency. Electroluminescence spectra from an Fe/AlGaAs/GaAs spin-LED exhibit significant circular polarization. The temperature dependence of the optical polarization and corresponding spin injection efficiency are determined. These results demonstrate that spin injecting contacts can be formed using a widely employed contact methodology, providing a ready pathway for the integration for spin transport into semiconductor processing technology.

AB - We describe how a ferromagnetic metal employed as a conventional Schottky barrier contact provides a practical and robust means of injecting spin-polarized carriers into a semiconductor device heterostructure, with spin injection efficiencies of 30 % extending to room temperature. The Schottky barrier formed at the Fe/AlGaAs interface provides a natural tunnel barrier for injection of spin polarized electrons under reverse bias. These carriers radiatively recombine in an AlGaAs/GaAs quantum well, emitting circularly polarized light, and the quantum selection rules which relate the optical and carrier spin polarizations provide a quantitative, model-independent measure of spin injection efficiency. Electroluminescence spectra from an Fe/AlGaAs/GaAs spin-LED exhibit significant circular polarization. The temperature dependence of the optical polarization and corresponding spin injection efficiency are determined. These results demonstrate that spin injecting contacts can be formed using a widely employed contact methodology, providing a ready pathway for the integration for spin transport into semiconductor processing technology.

UR - https://www.scopus.com/pages/publications/85017213286

U2 - 10.1109/INTMAG.2002.1001247

DO - 10.1109/INTMAG.2002.1001247

M3 - Conference contribution

AN - SCOPUS:85017213286

T3 - INTERMAG Europe 2002 - IEEE International Magnetics Conference

BT - INTERMAG Europe 2002 - IEEE International Magnetics Conference

A2 - Fidler, J.

A2 - Hillebrands, B.

A2 - Ross, C.

A2 - Weller, D.

A2 - Folks, L.

A2 - Hill, E.

A2 - Vazquez Villalabeitia, M.

A2 - Bain, J. A.

A2 - De Boeck, Jo

A2 - Wood, R.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002

Y2 - 28 April 2002 through 2 May 2002

ER -

Jonker BT, Hanbicki AT, Itskos G, Kioseoglou G, Petrou A. Electrical spin injection from a magnetic Schottky tunnel contact into a semiconductor. In Fidler J, Hillebrands B, Ross C, Weller D, Folks L, Hill E, Vazquez Villalabeitia M, Bain JA, De Boeck J, Wood R, editors, INTERMAG Europe 2002 - IEEE International Magnetics Conference. Institute of Electrical and Electronics Engineers Inc. 2002. 1001247. (INTERMAG Europe 2002 - IEEE International Magnetics Conference). doi: 10.1109/INTMAG.2002.1001247

Electrical spin injection from a magnetic Schottky tunnel contact into a semiconductor

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