Electrical spin injection and optical detection in InAs based light emitting diodes

A. V. Stier; C. J. Meining; B. D. McCombe; I. Chado; P. Grabs; G. Schmidt; L. W. Molenkamp

doi:10.1063/1.2975170

Electrical spin injection and optical detection in InAs based light emitting diodes

A. V. Stier
, C. J. Meining
, B. D. McCombe
, I. Chado
, P. Grabs
, G. Schmidt
, L. W. Molenkamp

Physics

SUNY Buffalo
Intel
University of Würzburg

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Results of low temperature circularly polarized electroluminescence (EL) studies of InAs-based spin-light emitting diodes in magnetic fields up to 10 T are presented. Spin polarized electrons injected from cubic n -(CdMn)Se recombine with unpolarized holes resulting in emission with a positive degree of optical polarization over this entire magnetic field range. Detailed rate equation modeling of the optical polarization degree (OPD) confirms a high spin injection efficiency (74%-95%) and a spin lifetime τs longer than the optical recombination time τr. Estimates of the temperature dependence of the ratio τr / τs from the OPD are compared with the Elliot-Yafet and Dyakonov-Perel models.

Original language	English
Article number	081112
Journal	Applied Physics Letters
Volume	93
Issue number	8
DOIs	https://doi.org/10.1063/1.2975170
State	Published - 2008

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10.1063/1.2975170

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@article{18d5eb84ac864ef48303b21d6d11cda6,

title = "Electrical spin injection and optical detection in InAs based light emitting diodes",

abstract = "Results of low temperature circularly polarized electroluminescence (EL) studies of InAs-based spin-light emitting diodes in magnetic fields up to 10 T are presented. Spin polarized electrons injected from cubic n -(CdMn)Se recombine with unpolarized holes resulting in emission with a positive degree of optical polarization over this entire magnetic field range. Detailed rate equation modeling of the optical polarization degree (OPD) confirms a high spin injection efficiency (74\%-95\%) and a spin lifetime τs longer than the optical recombination time τr. Estimates of the temperature dependence of the ratio τr / τs from the OPD are compared with the Elliot-Yafet and Dyakonov-Perel models.",

author = "Stier, \{A. V.\} and Meining, \{C. J.\} and McCombe, \{B. D.\} and I. Chado and P. Grabs and G. Schmidt and Molenkamp, \{L. W.\}",

year = "2008",

doi = "10.1063/1.2975170",

language = "English",

volume = "93",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

TY - JOUR

T1 - Electrical spin injection and optical detection in InAs based light emitting diodes

AU - Stier, A. V.

AU - Meining, C. J.

AU - McCombe, B. D.

AU - Chado, I.

AU - Grabs, P.

AU - Schmidt, G.

AU - Molenkamp, L. W.

PY - 2008

Y1 - 2008

N2 - Results of low temperature circularly polarized electroluminescence (EL) studies of InAs-based spin-light emitting diodes in magnetic fields up to 10 T are presented. Spin polarized electrons injected from cubic n -(CdMn)Se recombine with unpolarized holes resulting in emission with a positive degree of optical polarization over this entire magnetic field range. Detailed rate equation modeling of the optical polarization degree (OPD) confirms a high spin injection efficiency (74%-95%) and a spin lifetime τs longer than the optical recombination time τr. Estimates of the temperature dependence of the ratio τr / τs from the OPD are compared with the Elliot-Yafet and Dyakonov-Perel models.

AB - Results of low temperature circularly polarized electroluminescence (EL) studies of InAs-based spin-light emitting diodes in magnetic fields up to 10 T are presented. Spin polarized electrons injected from cubic n -(CdMn)Se recombine with unpolarized holes resulting in emission with a positive degree of optical polarization over this entire magnetic field range. Detailed rate equation modeling of the optical polarization degree (OPD) confirms a high spin injection efficiency (74%-95%) and a spin lifetime τs longer than the optical recombination time τr. Estimates of the temperature dependence of the ratio τr / τs from the OPD are compared with the Elliot-Yafet and Dyakonov-Perel models.

UR - https://www.scopus.com/pages/publications/51349153730

U2 - 10.1063/1.2975170

DO - 10.1063/1.2975170

M3 - Article

AN - SCOPUS:51349153730

SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 081112

ER -

Electrical spin injection and optical detection in InAs based light emitting diodes

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