Electrical signatures of ferromagnetism in epitaxial FeSi2 nanowires

T. Kim; J. P. Bird

doi:10.1063/1.3533400

Electrical signatures of ferromagnetism in epitaxial FeSi₂ nanowires

T. Kim
, J. P. Bird

Department of Electrical Engineering

Arizona State University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We perform electrical characterization of epitaxial FeSi₂ nanowires (NWs) realized by reactive epitaxy. Typical resistance values exceed 100 k, a high value that is attributed to the combined influence of interfacial scattering and process-related damage. Negative magnetoresistance due to weak localization, as well as hysteresis and anisotropic magnetoresistance, are also observed at low temperatures, confirming the ferromagnetic nature of these NWs.

Original language	English
Article number	263111
Journal	Applied Physics Letters
Volume	97
Issue number	26
DOIs	https://doi.org/10.1063/1.3533400
State	Published - Dec 27 2010

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title = "Electrical signatures of ferromagnetism in epitaxial FeSi2 nanowires",

abstract = "We perform electrical characterization of epitaxial FeSi2 nanowires (NWs) realized by reactive epitaxy. Typical resistance values exceed 100 k, a high value that is attributed to the combined influence of interfacial scattering and process-related damage. Negative magnetoresistance due to weak localization, as well as hysteresis and anisotropic magnetoresistance, are also observed at low temperatures, confirming the ferromagnetic nature of these NWs.",

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N2 - We perform electrical characterization of epitaxial FeSi2 nanowires (NWs) realized by reactive epitaxy. Typical resistance values exceed 100 k, a high value that is attributed to the combined influence of interfacial scattering and process-related damage. Negative magnetoresistance due to weak localization, as well as hysteresis and anisotropic magnetoresistance, are also observed at low temperatures, confirming the ferromagnetic nature of these NWs.

AB - We perform electrical characterization of epitaxial FeSi2 nanowires (NWs) realized by reactive epitaxy. Typical resistance values exceed 100 k, a high value that is attributed to the combined influence of interfacial scattering and process-related damage. Negative magnetoresistance due to weak localization, as well as hysteresis and anisotropic magnetoresistance, are also observed at low temperatures, confirming the ferromagnetic nature of these NWs.

UR - https://www.scopus.com/pages/publications/78650919440

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DO - 10.1063/1.3533400

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Electrical signatures of ferromagnetism in epitaxial FeSi₂ nanowires

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