Abstract
The effect of oxygen ion implantation on defect levels and the electrical properties of undoped InP (n-type) and Sn-doped InP have been investigated as a function of postimplant annealing at temperatures of 300 and 400° C. The surface interruption by ion bombardment was studied by a non-invasive optical technique-photoreflectance (PR) spectroscopy. Current-voltage (I-V) characterization and deep level transient spectros-copy (DLTS) were carried out. The free carrier compensation mechanism was studied from the microstructure behavior of defect levels associated with O+ implantation. Free carriers may be trapped in both residual and ion-bombardment-induced defect sites. Rapid thermal annealing (RTA) performed at different temperatures showed that if residual traps were removed by annealing, the compensation efficiency will be enhanced. Post-implant RTA treatment showed that at the higher temperature (400°C), trapped carriers may be re-excited, resulting in a weakened compensation. Comparing the results of undoped and Sn-doped InP indicated that the carrier compensation effect is substrate doping dependent.
| Original language | English |
|---|---|
| Pages (from-to) | 937-945 |
| Number of pages | 9 |
| Journal | Journal of Electronic Materials |
| Volume | 21 |
| Issue number | 10 |
| DOIs | |
| State | Published - Oct 1992 |
Keywords
- defect levels
- Oxygen implantation
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