Electrical properties of field-effect transistors based on C 60 nanowhiskers

Kenichi Ogawa; Tomohiro Kato; Asato Ikegami; Hajime Tsuji; Nobuyuki Aoki; Yuichi Ochiai; Jonathan P. Bird

doi:10.1063/1.2186519

Electrical properties of field-effect transistors based on C ₆₀ nanowhiskers

Kenichi Ogawa
, Tomohiro Kato
, Asato Ikegami
, Hajime Tsuji
, Nobuyuki Aoki
, Yuichi Ochiai
, Jonathan P. Bird

Department of Electrical Engineering

Chiba University

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

We fabricate field-effect transistors (FETs) based on C ₆₀ nanowhiskers (C ₆₀ NWs) and investigate their structural and electrical properties. Thermally annealed C ₆₀ NWs show x-ray powder-diffraction spectra that are consistent with a similar fee structure to that of C ₆₀ bulk crystals, although with a slightly reduced lattice constant (a = 13.9 Å). The C ₆₀ NW-FETs exhibit n-channel, normally-on, properties (or FETs) and their carrier mobility is estimated to be 2 × 10 ^-2 cm ²/V s under vacuum conditions at room temperature.

Original language	English
Article number	112109
Journal	Applied Physics Letters
Volume	88
Issue number	11
DOIs	https://doi.org/10.1063/1.2186519
State	Published - 2006

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10.1063/1.2186519

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title = "Electrical properties of field-effect transistors based on C 60 nanowhiskers",

abstract = "We fabricate field-effect transistors (FETs) based on C 60 nanowhiskers (C 60 NWs) and investigate their structural and electrical properties. Thermally annealed C 60 NWs show x-ray powder-diffraction spectra that are consistent with a similar fee structure to that of C 60 bulk crystals, although with a slightly reduced lattice constant (a = 13.9 {\AA}). The C 60 NW-FETs exhibit n-channel, normally-on, properties (or FETs) and their carrier mobility is estimated to be 2 {\texttimes} 10 -2 cm 2/V s under vacuum conditions at room temperature.",

author = "Kenichi Ogawa and Tomohiro Kato and Asato Ikegami and Hajime Tsuji and Nobuyuki Aoki and Yuichi Ochiai and Bird, \{Jonathan P.\}",

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doi = "10.1063/1.2186519",

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journal = "Applied Physics Letters",

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T1 - Electrical properties of field-effect transistors based on C 60 nanowhiskers

AU - Ogawa, Kenichi

AU - Kato, Tomohiro

AU - Ikegami, Asato

AU - Tsuji, Hajime

AU - Aoki, Nobuyuki

AU - Ochiai, Yuichi

AU - Bird, Jonathan P.

PY - 2006

Y1 - 2006

N2 - We fabricate field-effect transistors (FETs) based on C 60 nanowhiskers (C 60 NWs) and investigate their structural and electrical properties. Thermally annealed C 60 NWs show x-ray powder-diffraction spectra that are consistent with a similar fee structure to that of C 60 bulk crystals, although with a slightly reduced lattice constant (a = 13.9 Å). The C 60 NW-FETs exhibit n-channel, normally-on, properties (or FETs) and their carrier mobility is estimated to be 2 × 10 -2 cm 2/V s under vacuum conditions at room temperature.

AB - We fabricate field-effect transistors (FETs) based on C 60 nanowhiskers (C 60 NWs) and investigate their structural and electrical properties. Thermally annealed C 60 NWs show x-ray powder-diffraction spectra that are consistent with a similar fee structure to that of C 60 bulk crystals, although with a slightly reduced lattice constant (a = 13.9 Å). The C 60 NW-FETs exhibit n-channel, normally-on, properties (or FETs) and their carrier mobility is estimated to be 2 × 10 -2 cm 2/V s under vacuum conditions at room temperature.

UR - https://www.scopus.com/pages/publications/33645217511

U2 - 10.1063/1.2186519

DO - 10.1063/1.2186519

M3 - Article

AN - SCOPUS:33645217511

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 112109

ER -

Electrical properties of field-effect transistors based on C ₆₀ nanowhiskers

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