@inproceedings{8bae234092a04f85b602525bcf0dab42,
title = "Electrical properties of ferroelectric thin film capacitors with different structures",
abstract = "Ferroelectric BaTiO3 thin film capacitors were fabricated and using different designs. Silicon wafers with an oxide layer were used as the substrates. Conductive metallic oxide of RuO2 was reactively sputtered on SiO2/Si as a bottom electrode. The BaTiO3 thin films with a thickness in the range of 150-3--nm were deposited by RF magnetron sputtering. Different capacitor structures, including single layer amorphous, single layer polycrystalline, and bi-layer amorphous on polycrystalline, were investigated in this study. The clear interface between BaTiO3 and RuO2 as demonstrated by cross-sectional scanning electron microscopy implies little interdiffusion. The DC conductivity of a film with a thickness of around 200nm was as low as 1×10-13/Ω-cm at 4V. The dielectric constant of the composite structure was controlled in a range from 30 to 130. Breakdown voltage varied from 5×105V/cm to 1×106V/ cm.",
author = "Jia, \{O. X.\} and J. Yi and Shi, \{Z. O.\} and Ho, \{K. K.\} and Chang, \{L. H.\} and Anderson, \{W. A.\}",
year = "1993",
language = "English",
isbn = "1558991794",
series = "Materials Research Society Symposium Proceedings",
publisher = "Publ by Materials Research Society",
pages = "523--527",
editor = "Jerzy Kanicki and Warren, \{William L.\} and Devine, \{Roderick A.B.\} and Masakiyo Matsumura",
booktitle = "Materials Research Society Symposium Proceedings",
note = "Proceedings of a Symposium on Amorphous Insulating Thin Films ; Conference date: 01-12-1992 Through 04-12-1992",
}