@inbook{e2a12c0ab599440191f8f8d69bded9e9,
title = "Electrical properties 2: Electron transport studies in β-Ga2O3",
abstract = "This chapter discusses the electron transport properties and their implications on power devices under very high electric fields (>1 MV/cm). A combination of first-principles calculation of microscopic interactions, Monte Carlo simulation of electron transport, and TCAD simulation on power transistors manifests a bottom-up view of the hot electron dynamics in β-Ga2O3 devices. While the focus of the chapter is on impact ionization and resulting avalanche breakdown, a brief overview on low-field and moderately high-field transport are also presented. The role of crystal orientation on breakdown is discussed in detail. Compact model parameters for breakdown phenomena are provided. Estimates of breakdown field are shown through simple analytical calculations and also through a TCAD simulation.",
keywords = "2DEG, Anisotropy, Avalanche breakdown, Bas-centered monoclinic crystal, Bloch oscillations, Chynoweth parameters, Critical electric field, Electron transport, Electron-–electron interactions, Electron–phonon interactions, Full-band Monte Carlo, Impact ionization, Intraband scattering, Ionization integral, LO-plasmon coupling, Mobility, Polar optical phonons, Screening, TCAD simulation, Velocity saturation, Β-GaO",
author = "Krishnendu Ghosh and Avinash Kumar and Uttam Singisetti",
note = "Publisher Copyright: {\textcopyright} Springer Nature Switzerland AG 2020.",
year = "2020",
doi = "10.1007/978-3-030-37153-1\_23",
language = "English",
series = "Springer Series in Materials Science",
publisher = "Springer",
pages = "407--420",
booktitle = "Springer Series in Materials Science",
address = "Germany",
}