Electrical control of magnetic quantum wells: Monte Carlo simulations

We use Monte Carlo simulations to analyze electric-field control of Curie temperature T_C for carrier-mediated ferromagnetism in semiconductors. Gating employed to achieve electrostatic doping in an optimized geometry of (Ga, Mn)As, a prototypical ferromagnetic semiconductor, reveals a highly tunable ferromagnetic order. We show the feasibility of ΔT_C>100 K, an order of magnitude greater then the state-of-the-art measurements, at fields substantially smaller then the breakdown values. Such controllable ferromagnetism may help elucidate the mechanism of carrier-mediated magnetism in various semiconductors and offer versatile spintronic applications.