Electrical characterization of Pt-Ti/p-InGaAs/n-InP heterostructures

K. L. Jiao; A. J. Soltyka; W. A. Anderson; A. Katz

doi:10.1109/iciprm.1990.203021

Electrical characterization of Pt-Ti/p-InGaAs/n-InP heterostructures

K. L. Jiao
, A. J. Soltyka
, W. A. Anderson
, A. Katz

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to conference › Paper › peer-review

Abstract

The electrical properties of Pt-Ti/p-InGaAs/n-InP heterostructures annealed at different temperatures were studied using deep-level transient spectroscopy and I-V-T measurements in order to evaluate the effect of the Pt/Ti ohmic contact and corresponding rapid thermal processing (RTP) temperature on the device performance. It was found that a new hole trap level of 0.89 eV was induced at temperatures above 500°C but not at lower temperatures. Ti interdiffusion is believed to be responsible for this hole trap. Four electron trap levels with activation energies of 0.61, 0.45, 0.35, and 0.30 eV were observed for all samples and believed to be native defects in the InP. I-V-T measurements indicated that the current mechanisms are independent of the RTP temperatures.

Original language	English
Pages	220-223
Number of pages	4
DOIs	https://doi.org/10.1109/iciprm.1990.203021
State	Published - 1990
Event	Second International Conference on Indium Phosphide and Related Materials - Denver, CO, USA Duration: Apr 23 1990 → Apr 25 1990

Conference

Conference	Second International Conference on Indium Phosphide and Related Materials
City	Denver, CO, USA
Period	04/23/90 → 04/25/90

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10.1109/iciprm.1990.203021

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title = "Electrical characterization of Pt-Ti/p-InGaAs/n-InP heterostructures",

abstract = "The electrical properties of Pt-Ti/p-InGaAs/n-InP heterostructures annealed at different temperatures were studied using deep-level transient spectroscopy and I-V-T measurements in order to evaluate the effect of the Pt/Ti ohmic contact and corresponding rapid thermal processing (RTP) temperature on the device performance. It was found that a new hole trap level of 0.89 eV was induced at temperatures above 500°C but not at lower temperatures. Ti interdiffusion is believed to be responsible for this hole trap. Four electron trap levels with activation energies of 0.61, 0.45, 0.35, and 0.30 eV were observed for all samples and believed to be native defects in the InP. I-V-T measurements indicated that the current mechanisms are independent of the RTP temperatures.",

author = "Jiao, \{K. L.\} and Soltyka, \{A. J.\} and Anderson, \{W. A.\} and A. Katz",

year = "1990",

doi = "10.1109/iciprm.1990.203021",

language = "English",

pages = "220--223",

note = "Second International Conference on Indium Phosphide and Related Materials ; Conference date: 23-04-1990 Through 25-04-1990",

}

TY - CONF

T1 - Electrical characterization of Pt-Ti/p-InGaAs/n-InP heterostructures

AU - Jiao, K. L.

AU - Soltyka, A. J.

AU - Anderson, W. A.

AU - Katz, A.

PY - 1990

Y1 - 1990

N2 - The electrical properties of Pt-Ti/p-InGaAs/n-InP heterostructures annealed at different temperatures were studied using deep-level transient spectroscopy and I-V-T measurements in order to evaluate the effect of the Pt/Ti ohmic contact and corresponding rapid thermal processing (RTP) temperature on the device performance. It was found that a new hole trap level of 0.89 eV was induced at temperatures above 500°C but not at lower temperatures. Ti interdiffusion is believed to be responsible for this hole trap. Four electron trap levels with activation energies of 0.61, 0.45, 0.35, and 0.30 eV were observed for all samples and believed to be native defects in the InP. I-V-T measurements indicated that the current mechanisms are independent of the RTP temperatures.

AB - The electrical properties of Pt-Ti/p-InGaAs/n-InP heterostructures annealed at different temperatures were studied using deep-level transient spectroscopy and I-V-T measurements in order to evaluate the effect of the Pt/Ti ohmic contact and corresponding rapid thermal processing (RTP) temperature on the device performance. It was found that a new hole trap level of 0.89 eV was induced at temperatures above 500°C but not at lower temperatures. Ti interdiffusion is believed to be responsible for this hole trap. Four electron trap levels with activation energies of 0.61, 0.45, 0.35, and 0.30 eV were observed for all samples and believed to be native defects in the InP. I-V-T measurements indicated that the current mechanisms are independent of the RTP temperatures.

UR - https://www.scopus.com/pages/publications/0025530919

U2 - 10.1109/iciprm.1990.203021

DO - 10.1109/iciprm.1990.203021

M3 - Paper

AN - SCOPUS:0025530919

SP - 220

EP - 223

T2 - Second International Conference on Indium Phosphide and Related Materials

Y2 - 23 April 1990 through 25 April 1990

ER -

Electrical characterization of Pt-Ti/p-InGaAs/n-InP heterostructures

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