@inproceedings{c09d0b5446f641e49c36ae28c91801c6,
title = "Electrical characterization of ITO/p-InP solar cells",
abstract = "Indium tin oxide (ITO)/p-InP solar diodes were fabricated by RF magnetron sputtering with variables of hydrogen during deposition, substrate temperature and in one case, an 80 A Sn:In layer between ITO and InP. Analysis by current-voltage-temperature and spectroscopic techniques reveal the healing effect of adding H2 during deposition of ITO. Higher substrate temperature during ITO deposition gives improved ITO films but induces more surface defects. Current conduction is predominantly by thermionic emission. An 80 A In:Sn layer between InP and ITO causes a significant change in all measured data.",
author = "Shi, \{Z. Q.\} and Jia, \{Q. X.\} and L. He and Chang, \{L. H.\} and Lee, \{H. J.\} and Anderson, \{W. A.\}",
year = "1993",
language = "English",
isbn = "0780312201",
series = "Conference Record of the IEEE Photovoltaic Specialists Conference",
publisher = "Publ by IEEE",
pages = "1432--1436",
editor = "Anon",
booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",
note = "Proceedings of the 23rd IEEE Photovoltaic Specialists Conference ; Conference date: 10-05-1993 Through 14-05-1993",
}