Electrical characterization of atomic layer deposited Al2O3/InN interfaces

Ye Jia; Amir M. Dabiran; Uttam Singisetti

doi:10.1116/1.4936928

Electrical characterization of atomic layer deposited Al₂O₃/InN interfaces

Ye Jia
, Amir M. Dabiran
, Uttam Singisetti

Department of Electrical Engineering

SUNY Buffalo
SVT Associates, Inc.

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

In this article, the authors report the electrical properties of atomic layer deposited Al 2 O 3 / InN interfaces evaluated by capacitance-voltage (C-V), current-voltage (I-V), and x-ray photoemission spectroscopy techniques. I-V characteristics show low leakage currents (300 pA / μ m 2) in the deposited dielectrics. However, C-V curves show that ex situ surface treatments with hydrochloric acid, ammonium sulfide, and hydrobromic acid has little effect on the surface electron accumulation layer, with an estimated interface state density over 4 × 10 13 / cm 2. The effect of the surface treatments on valance band offset between Al 2 O 3 and InN was also investigated.

Original language	English
Article number	01A133
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	34
Issue number	1
DOIs	https://doi.org/10.1116/1.4936928
State	Published - Jan 1 2016

Access to Document

10.1116/1.4936928

Cite this

@article{2f36a939042144e39826f8ffe90f3c76,

title = "Electrical characterization of atomic layer deposited Al2O3/InN interfaces",

abstract = "In this article, the authors report the electrical properties of atomic layer deposited Al 2 O 3 / InN interfaces evaluated by capacitance-voltage (C-V), current-voltage (I-V), and x-ray photoemission spectroscopy techniques. I-V characteristics show low leakage currents (300 pA / μ m 2) in the deposited dielectrics. However, C-V curves show that ex situ surface treatments with hydrochloric acid, ammonium sulfide, and hydrobromic acid has little effect on the surface electron accumulation layer, with an estimated interface state density over 4 × 10 13 / cm 2. The effect of the surface treatments on valance band offset between Al 2 O 3 and InN was also investigated.",

author = "Ye Jia and Dabiran, \{Amir M.\} and Uttam Singisetti",

note = "Publisher Copyright: {\textcopyright} 2015 American Vacuum Society.",

year = "2016",

month = jan,

day = "1",

doi = "10.1116/1.4936928",

language = "English",

volume = "34",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "1",

}

TY - JOUR

T1 - Electrical characterization of atomic layer deposited Al2O3/InN interfaces

AU - Jia, Ye

AU - Dabiran, Amir M.

AU - Singisetti, Uttam

PY - 2016/1/1

Y1 - 2016/1/1

N2 - In this article, the authors report the electrical properties of atomic layer deposited Al 2 O 3 / InN interfaces evaluated by capacitance-voltage (C-V), current-voltage (I-V), and x-ray photoemission spectroscopy techniques. I-V characteristics show low leakage currents (300 pA / μ m 2) in the deposited dielectrics. However, C-V curves show that ex situ surface treatments with hydrochloric acid, ammonium sulfide, and hydrobromic acid has little effect on the surface electron accumulation layer, with an estimated interface state density over 4 × 10 13 / cm 2. The effect of the surface treatments on valance band offset between Al 2 O 3 and InN was also investigated.

AB - In this article, the authors report the electrical properties of atomic layer deposited Al 2 O 3 / InN interfaces evaluated by capacitance-voltage (C-V), current-voltage (I-V), and x-ray photoemission spectroscopy techniques. I-V characteristics show low leakage currents (300 pA / μ m 2) in the deposited dielectrics. However, C-V curves show that ex situ surface treatments with hydrochloric acid, ammonium sulfide, and hydrobromic acid has little effect on the surface electron accumulation layer, with an estimated interface state density over 4 × 10 13 / cm 2. The effect of the surface treatments on valance band offset between Al 2 O 3 and InN was also investigated.

UR - https://www.scopus.com/pages/publications/84949293129

U2 - 10.1116/1.4936928

DO - 10.1116/1.4936928

M3 - Article

AN - SCOPUS:84949293129

SN - 0734-2101

VL - 34

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 1

M1 - 01A133

ER -

Electrical characterization of atomic layer deposited Al₂O₃/InN interfaces

Abstract

Access to Document

Other files and links

Fingerprint

Cite this