ELECTRIC PINCH EFFECT IN MANY-VALLEY SEMICONDUCTORS UNDER ELECTRON HEATING CONDITIONS.

V. V. Mitin

ELECTRIC PINCH EFFECT IN MANY-VALLEY SEMICONDUCTORS UNDER ELECTRON HEATING CONDITIONS.

V. V. Mitin

Department of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

It is shown that carrier pinch and strongly rectifying current-voltage characteristics are exhibited by samples which are thin compared with the extended electron-hole recombination length if the conditions on the surfaces are strongly asymmetrical and the conditions of the Sasaki effect obtained. The direction of the pinch is determined by the direction of the current and by the dependence of the intervalley scattering time on the carrier heating.

Original language	English
Pages (from-to)	1511-1515
Number of pages	5
Journal	Semiconductors
Volume	5
Issue number	9
State	Published - 1972

Cite this

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title = "ELECTRIC PINCH EFFECT IN MANY-VALLEY SEMICONDUCTORS UNDER ELECTRON HEATING CONDITIONS.",

abstract = "It is shown that carrier pinch and strongly rectifying current-voltage characteristics are exhibited by samples which are thin compared with the extended electron-hole recombination length if the conditions on the surfaces are strongly asymmetrical and the conditions of the Sasaki effect obtained. The direction of the pinch is determined by the direction of the current and by the dependence of the intervalley scattering time on the carrier heating.",

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year = "1972",

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T1 - ELECTRIC PINCH EFFECT IN MANY-VALLEY SEMICONDUCTORS UNDER ELECTRON HEATING CONDITIONS.

AU - Mitin, V. V.

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N2 - It is shown that carrier pinch and strongly rectifying current-voltage characteristics are exhibited by samples which are thin compared with the extended electron-hole recombination length if the conditions on the surfaces are strongly asymmetrical and the conditions of the Sasaki effect obtained. The direction of the pinch is determined by the direction of the current and by the dependence of the intervalley scattering time on the carrier heating.

AB - It is shown that carrier pinch and strongly rectifying current-voltage characteristics are exhibited by samples which are thin compared with the extended electron-hole recombination length if the conditions on the surfaces are strongly asymmetrical and the conditions of the Sasaki effect obtained. The direction of the pinch is determined by the direction of the current and by the dependence of the intervalley scattering time on the carrier heating.

UR - https://www.scopus.com/pages/publications/0015312343

M3 - Article

AN - SCOPUS:0015312343

SN - 1063-7826

VL - 5

SP - 1511

EP - 1515

JO - Semiconductors

JF - Semiconductors

IS - 9

ER -

ELECTRIC PINCH EFFECT IN MANY-VALLEY SEMICONDUCTORS UNDER ELECTRON HEATING CONDITIONS.

Abstract

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