Elastic accommodation of heteroepitaxial InSb films on GaAs

K. Rajan; R. Gong; J. Webb

doi:10.1063/1.103365

Elastic accommodation of heteroepitaxial InSb films on GaAs

K. Rajan
, R. Gong
, J. Webb

Department of Materials Design and Innovation

Rensselaer Polytechnic Institute
National Research Council of Canada

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Heteroepitaxial films of InSb on GaAs (100) grown by metalorganic magnetron sputtering have been studied by transmission electron microscopy. The elastic strain in the InSb films has been measured using Moiré fringe analysis. Dilational lattice strain was found to decrease with increasing film thickness. The measured strains are in general agreement with a simple strain energy criterion for elastic accommodation. The application of a coincidence site lattice model for heteroepitaxy is also discussed.

Original language	English
Pages (from-to)	1446-1448
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	14
DOIs	https://doi.org/10.1063/1.103365
State	Published - 1990

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title = "Elastic accommodation of heteroepitaxial InSb films on GaAs",

abstract = "Heteroepitaxial films of InSb on GaAs (100) grown by metalorganic magnetron sputtering have been studied by transmission electron microscopy. The elastic strain in the InSb films has been measured using Moir{\'e} fringe analysis. Dilational lattice strain was found to decrease with increasing film thickness. The measured strains are in general agreement with a simple strain energy criterion for elastic accommodation. The application of a coincidence site lattice model for heteroepitaxy is also discussed.",

author = "K. Rajan and R. Gong and J. Webb",

year = "1990",

doi = "10.1063/1.103365",

language = "English",

volume = "57",

pages = "1446--1448",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Elastic accommodation of heteroepitaxial InSb films on GaAs

AU - Rajan, K.

AU - Gong, R.

AU - Webb, J.

PY - 1990

Y1 - 1990

N2 - Heteroepitaxial films of InSb on GaAs (100) grown by metalorganic magnetron sputtering have been studied by transmission electron microscopy. The elastic strain in the InSb films has been measured using Moiré fringe analysis. Dilational lattice strain was found to decrease with increasing film thickness. The measured strains are in general agreement with a simple strain energy criterion for elastic accommodation. The application of a coincidence site lattice model for heteroepitaxy is also discussed.

AB - Heteroepitaxial films of InSb on GaAs (100) grown by metalorganic magnetron sputtering have been studied by transmission electron microscopy. The elastic strain in the InSb films has been measured using Moiré fringe analysis. Dilational lattice strain was found to decrease with increasing film thickness. The measured strains are in general agreement with a simple strain energy criterion for elastic accommodation. The application of a coincidence site lattice model for heteroepitaxy is also discussed.

UR - https://www.scopus.com/pages/publications/33749827675

U2 - 10.1063/1.103365

DO - 10.1063/1.103365

M3 - Article

AN - SCOPUS:33749827675

SN - 0003-6951

VL - 57

SP - 1446

EP - 1448

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Elastic accommodation of heteroepitaxial InSb films on GaAs

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