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Effects of stimulated optical phonon decay on hot carriers in GaAs

  • D. A. Romanov
  • , B. A. Glavin
  • , V. V. Mitin
  • , M. A. Stroscio
  • Wayne State University
  • NASU - Institute of Semiconductors Physics
  • US ARO

Research output: Contribution to journalConference articlepeer-review

Abstract

We have considered energy transfer from highly nonequilibrium electron gas to crystal lattice via emission of high-frequency longitudinal optical (LO) phonons and their subsequent transformations. At high intensity of electron excitation, the daughter LA phonons resulting from LO-phonon decay accumulate in considerable numbers and cause the LO-phonon decay to be a stimulated process. The stimulated decay effectively decimates the LO phonons and thus prevents their reabsorption by the electrons. These effects being incorporated in description of the electron-phonon kinetics, we have obtained considerable intensification of energy transfer from the electron subsystem. We also qualitatively discuss the effects of stimulation for alternative channels of LO-phonon decay.

Original languageEnglish
Pages (from-to)422-424
Number of pages3
JournalPhysica B: Condensed Matter
Volume272
Issue number1-4
DOIs
StatePublished - Dec 1 1999
EventProceedings of the 1999 11th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors (HCIS-11) - Kyoto, Jpn
Duration: Jul 19 1999Jul 23 1999

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