Effects of pressure on the zn vacancy in ZNSE: Essential role of lattice relaxation for a basic C3v defect

V. Iota; B. A. Weinstein

doi:10.1103/PhysRevLett.81.4955

Effects of pressure on the zn vacancy in ZNSE: Essential role of lattice relaxation for a basic C_3v defect

V. Iota
, B. A. Weinstein

Physics

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The photoluminescence (PL) and PL excitation (PLE) spectra of the isolated Zn vacancy (V_Zn) in ZnSe are measured under hydrostatic pressure to 50 kbar at 7 K. The PL band shifts with pressure, roughly 30% faster than the band gap. Compression decreases the Stokes shift, reflecting a reduction in the C_3v lattice relaxation around the V^-_Zn site. Defect-molecule calculations show that this arises from the dominance of spring-constant stiffening over increased Jahn-Teller coupling. We determine the V_Zn configuration-coordinate diagram at high pressure. Compression deepens the energy of the V^-_Zn thermal level.

Original language	English
Pages (from-to)	4955-4958
Number of pages	4
Journal	Physical Review Letters
Volume	81
Issue number	22
DOIs	https://doi.org/10.1103/PhysRevLett.81.4955
State	Published - 1998

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@article{8da4b9b1561947c4aa65ede7cdd0b8c9,

title = "Effects of pressure on the zn vacancy in ZNSE: Essential role of lattice relaxation for a basic C3v defect",

abstract = "The photoluminescence (PL) and PL excitation (PLE) spectra of the isolated Zn vacancy (VZn) in ZnSe are measured under hydrostatic pressure to 50 kbar at 7 K. The PL band shifts with pressure, roughly 30\% faster than the band gap. Compression decreases the Stokes shift, reflecting a reduction in the C3v lattice relaxation around the V-Zn site. Defect-molecule calculations show that this arises from the dominance of spring-constant stiffening over increased Jahn-Teller coupling. We determine the VZn configuration-coordinate diagram at high pressure. Compression deepens the energy of the V-Zn thermal level.",

author = "V. Iota and Weinstein, \{B. A.\}",

year = "1998",

doi = "10.1103/PhysRevLett.81.4955",

language = "English",

volume = "81",

pages = "4955--4958",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "22",

}

TY - JOUR

T1 - Effects of pressure on the zn vacancy in ZNSE

T2 - Essential role of lattice relaxation for a basic C3v defect

AU - Iota, V.

AU - Weinstein, B. A.

PY - 1998

Y1 - 1998

N2 - The photoluminescence (PL) and PL excitation (PLE) spectra of the isolated Zn vacancy (VZn) in ZnSe are measured under hydrostatic pressure to 50 kbar at 7 K. The PL band shifts with pressure, roughly 30% faster than the band gap. Compression decreases the Stokes shift, reflecting a reduction in the C3v lattice relaxation around the V-Zn site. Defect-molecule calculations show that this arises from the dominance of spring-constant stiffening over increased Jahn-Teller coupling. We determine the VZn configuration-coordinate diagram at high pressure. Compression deepens the energy of the V-Zn thermal level.

AB - The photoluminescence (PL) and PL excitation (PLE) spectra of the isolated Zn vacancy (VZn) in ZnSe are measured under hydrostatic pressure to 50 kbar at 7 K. The PL band shifts with pressure, roughly 30% faster than the band gap. Compression decreases the Stokes shift, reflecting a reduction in the C3v lattice relaxation around the V-Zn site. Defect-molecule calculations show that this arises from the dominance of spring-constant stiffening over increased Jahn-Teller coupling. We determine the VZn configuration-coordinate diagram at high pressure. Compression deepens the energy of the V-Zn thermal level.

UR - https://www.scopus.com/pages/publications/4244036068

U2 - 10.1103/PhysRevLett.81.4955

DO - 10.1103/PhysRevLett.81.4955

M3 - Article

AN - SCOPUS:4244036068

SN - 0031-9007

VL - 81

SP - 4955

EP - 4958

JO - Physical Review Letters

JF - Physical Review Letters

IS - 22

ER -

Effects of pressure on the zn vacancy in ZNSE: Essential role of lattice relaxation for a basic C_3v defect

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