EFFECTS OF Na + IONS ON FAR IR OPTICAL SPECTROSCOPY OF Si INVERSION LAYERS.

B. D. McCombe; D. E. Schafer

EFFECTS OF Na⁺ IONS ON FAR IR OPTICAL SPECTROSCOPY OF Si INVERSION LAYERS.

B. D. McCombe
, D. E. Schafer

Physics

Research output: Contribution to conference › Paper › peer-review

9 Scopus citations

Abstract

Helium temperature far IR spectroscopic studies of Si inversion layers have been carried out in the subband geometry as a function of net positive oxide charge varied by drifting mobile Na** plus ions to the interface. Results are interpreted in terms of ″impurity shifted″ subband transitions.

Original language	English
Pages	1227-1230
Number of pages	4
State	Published - 1979
Event	Pap from the Int Conf on the Phys of Semicond, 14th - Edinburgh, Scotl Duration: Sep 4 1978 → Sep 8 1978

Conference

Conference	Pap from the Int Conf on the Phys of Semicond, 14th
City	Edinburgh, Scotl
Period	09/4/78 → 09/8/78

Cite this

@conference{aea9cbbc3bd24375a435d0ffd632ae41,

title = "EFFECTS OF Na + IONS ON FAR IR OPTICAL SPECTROSCOPY OF Si INVERSION LAYERS.",

abstract = "Helium temperature far IR spectroscopic studies of Si inversion layers have been carried out in the subband geometry as a function of net positive oxide charge varied by drifting mobile Na** plus ions to the interface. Results are interpreted in terms of ″impurity shifted″ subband transitions.",

author = "McCombe, \{B. D.\} and Schafer, \{D. E.\}",

year = "1979",

language = "English",

pages = "1227--1230",

note = "Pap from the Int Conf on the Phys of Semicond, 14th ; Conference date: 04-09-1978 Through 08-09-1978",

}

TY - CONF

T1 - EFFECTS OF Na + IONS ON FAR IR OPTICAL SPECTROSCOPY OF Si INVERSION LAYERS.

AU - McCombe, B. D.

AU - Schafer, D. E.

PY - 1979

Y1 - 1979

N2 - Helium temperature far IR spectroscopic studies of Si inversion layers have been carried out in the subband geometry as a function of net positive oxide charge varied by drifting mobile Na** plus ions to the interface. Results are interpreted in terms of ″impurity shifted″ subband transitions.

AB - Helium temperature far IR spectroscopic studies of Si inversion layers have been carried out in the subband geometry as a function of net positive oxide charge varied by drifting mobile Na** plus ions to the interface. Results are interpreted in terms of ″impurity shifted″ subband transitions.

UR - https://www.scopus.com/pages/publications/0018310101

M3 - Paper

AN - SCOPUS:0018310101

SP - 1227

EP - 1230

T2 - Pap from the Int Conf on the Phys of Semicond, 14th

Y2 - 4 September 1978 through 8 September 1978

ER -

EFFECTS OF Na⁺ IONS ON FAR IR OPTICAL SPECTROSCOPY OF Si INVERSION LAYERS.

Abstract

Conference

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