Effects of localization on hot carriers in InAs/AlAsxSb1-x quantum wells

J. Tang; V. R. Whiteside; H. Esmaielpour; S. Vijeyaragunathan; T. D. Mishima; M. B. Santos; I. R. Sellers

doi:10.1063/1.4907630

Effects of localization on hot carriers in InAs/AlAs_xSb_1-_x quantum wells

J. Tang
, V. R. Whiteside
, H. Esmaielpour
, S. Vijeyaragunathan
, T. D. Mishima
, M. B. Santos
, I. R. Sellers

Department of Electrical Engineering

University of Oklahoma

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

The temperature dependence of a InAs/AlAs_0.84Sb_0.16 multi-quantum-well sample is studied using continuous wave photoluminescence. An "s-shape" shift in peak energy is observed and attributed to low energy localization states. High incident power density photoluminescence measurements were performed to probe the nature of such localization. The results opposed the possibility of a type-II band structure and supported the idea of low energy localization states. The effect of such localization on hot carriers in our system was studied and an improvement in their stability due to hole mobility at elevated temperature is presented.

Original language	English
Article number	061902
Journal	Applied Physics Letters
Volume	106
Issue number	6
DOIs	https://doi.org/10.1063/1.4907630
State	Published - Feb 9 2015

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10.1063/1.4907630

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title = "Effects of localization on hot carriers in InAs/AlAsxSb1-x quantum wells",

abstract = "The temperature dependence of a InAs/AlAs0.84Sb0.16 multi-quantum-well sample is studied using continuous wave photoluminescence. An {"}s-shape{"} shift in peak energy is observed and attributed to low energy localization states. High incident power density photoluminescence measurements were performed to probe the nature of such localization. The results opposed the possibility of a type-II band structure and supported the idea of low energy localization states. The effect of such localization on hot carriers in our system was studied and an improvement in their stability due to hole mobility at elevated temperature is presented.",

author = "J. Tang and Whiteside, \{V. R.\} and H. Esmaielpour and S. Vijeyaragunathan and Mishima, \{T. D.\} and Santos, \{M. B.\} and Sellers, \{I. R.\}",

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T1 - Effects of localization on hot carriers in InAs/AlAsxSb1-x quantum wells

AU - Tang, J.

AU - Whiteside, V. R.

AU - Esmaielpour, H.

AU - Vijeyaragunathan, S.

AU - Mishima, T. D.

AU - Santos, M. B.

AU - Sellers, I. R.

PY - 2015/2/9

Y1 - 2015/2/9

N2 - The temperature dependence of a InAs/AlAs0.84Sb0.16 multi-quantum-well sample is studied using continuous wave photoluminescence. An "s-shape" shift in peak energy is observed and attributed to low energy localization states. High incident power density photoluminescence measurements were performed to probe the nature of such localization. The results opposed the possibility of a type-II band structure and supported the idea of low energy localization states. The effect of such localization on hot carriers in our system was studied and an improvement in their stability due to hole mobility at elevated temperature is presented.

AB - The temperature dependence of a InAs/AlAs0.84Sb0.16 multi-quantum-well sample is studied using continuous wave photoluminescence. An "s-shape" shift in peak energy is observed and attributed to low energy localization states. High incident power density photoluminescence measurements were performed to probe the nature of such localization. The results opposed the possibility of a type-II band structure and supported the idea of low energy localization states. The effect of such localization on hot carriers in our system was studied and an improvement in their stability due to hole mobility at elevated temperature is presented.

UR - https://www.scopus.com/pages/publications/84923923578

U2 - 10.1063/1.4907630

DO - 10.1063/1.4907630

M3 - Article

AN - SCOPUS:84923923578

SN - 0003-6951

VL - 106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 061902

ER -

Effects of localization on hot carriers in InAs/AlAs_xSb_1-_x quantum wells

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