Effects of implantant depth distribution on photoluminescence spectra in Be-implanted GaAs

S. G. Bishop; J. Comas; S. Sundaram; B. D. McCombe

doi:10.1063/1.89571

Effects of implantant depth distribution on photoluminescence spectra in Be-implanted GaAs

S. G. Bishop
, J. Comas
, S. Sundaram
, B. D. McCombe

Physics

Naval Research Laboratory

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Photoluminescence spectra from ion-implanted Be acceptors in GaAs have been studied as a function of wavelength and intensity of excitation light over the implant-fluence range 3×10¹² to 1×10¹⁵ cm ^-2. It is demonstrated that the nonuniform distributions of implantant concentration as a function of depth in the implanted layer produce a profiling effect which causes anomalous changes in photoluminescence line shapes and energy positions as a function of excitation intensity. These results imply photoexcited carrier diffusion lengths of much less than 1 μm in implanted and annealed layers in bulk GaAs.

Original language	English
Pages (from-to)	845-847
Number of pages	3
Journal	Applied Physics Letters
Volume	31
Issue number	12
DOIs	https://doi.org/10.1063/1.89571
State	Published - 1977

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title = "Effects of implantant depth distribution on photoluminescence spectra in Be-implanted GaAs",

abstract = "Photoluminescence spectra from ion-implanted Be acceptors in GaAs have been studied as a function of wavelength and intensity of excitation light over the implant-fluence range 3×1012 to 1×1015 cm -2. It is demonstrated that the nonuniform distributions of implantant concentration as a function of depth in the implanted layer produce a profiling effect which causes anomalous changes in photoluminescence line shapes and energy positions as a function of excitation intensity. These results imply photoexcited carrier diffusion lengths of much less than 1 μm in implanted and annealed layers in bulk GaAs.",

author = "Bishop, \{S. G.\} and J. Comas and S. Sundaram and McCombe, \{B. D.\}",

year = "1977",

doi = "10.1063/1.89571",

language = "English",

volume = "31",

pages = "845--847",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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T1 - Effects of implantant depth distribution on photoluminescence spectra in Be-implanted GaAs

AU - Bishop, S. G.

AU - Comas, J.

AU - Sundaram, S.

AU - McCombe, B. D.

PY - 1977

Y1 - 1977

N2 - Photoluminescence spectra from ion-implanted Be acceptors in GaAs have been studied as a function of wavelength and intensity of excitation light over the implant-fluence range 3×1012 to 1×1015 cm -2. It is demonstrated that the nonuniform distributions of implantant concentration as a function of depth in the implanted layer produce a profiling effect which causes anomalous changes in photoluminescence line shapes and energy positions as a function of excitation intensity. These results imply photoexcited carrier diffusion lengths of much less than 1 μm in implanted and annealed layers in bulk GaAs.

AB - Photoluminescence spectra from ion-implanted Be acceptors in GaAs have been studied as a function of wavelength and intensity of excitation light over the implant-fluence range 3×1012 to 1×1015 cm -2. It is demonstrated that the nonuniform distributions of implantant concentration as a function of depth in the implanted layer produce a profiling effect which causes anomalous changes in photoluminescence line shapes and energy positions as a function of excitation intensity. These results imply photoexcited carrier diffusion lengths of much less than 1 μm in implanted and annealed layers in bulk GaAs.

UR - https://www.scopus.com/pages/publications/0343336457

U2 - 10.1063/1.89571

DO - 10.1063/1.89571

M3 - Article

AN - SCOPUS:0343336457

SN - 0003-6951

VL - 31

SP - 845

EP - 847

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

ER -

Effects of implantant depth distribution on photoluminescence spectra in Be-implanted GaAs

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