Effects of high-energy electron irradiation on ZnO/Si MSM photodetectors

Frank Catalfamo; Tingfang Yen; Juhyung Yun; Wayne A. Anderson

doi:10.1007/s11664-010-1411-1

Effects of high-energy electron irradiation on ZnO/Si MSM photodetectors

Frank Catalfamo
, Tingfang Yen
, Juhyung Yun
, Wayne A. Anderson

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

ZnO/Si metal-semiconductor-metal photodetectors (MSM-PDs) were subjected to high-energy electron irradiation (HEEI) to total fluence of 2 × 10 ¹³ cm ^-2. ZnO/Si MSM-PDs demonstrated at least 43% greater radiation resistance than similar Si devices. Room-temperature annealing of radiation damage was observed as 63% recovery of photocurrent over 47 days. The current transport mechanism for ZnO/Si MSM-PDs was dominated by space-charge-limited conduction (SCLC) with minimal effect on conduction regime due to HEEI. Analysis of photoluminescence (PL) data indicates that the radiation-induced defects are likely oxygen and zinc vacancies, i.e., (V ₀ ⁺) and (V _Zn ^--H ⁺) ⁰, respectively.

Original language	English
Pages (from-to)	433-439
Number of pages	7
Journal	Journal of Electronic Materials
Volume	40
Issue number	4
DOIs	https://doi.org/10.1007/s11664-010-1411-1
State	Published - Apr 2011

Keywords

radiation resistance
room-temperature annealing
ZnO/Si MSM photodetector

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10.1007/s11664-010-1411-1

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@article{af1ad328abb840d5913da65424bf0675,

title = "Effects of high-energy electron irradiation on ZnO/Si MSM photodetectors",

abstract = "ZnO/Si metal-semiconductor-metal photodetectors (MSM-PDs) were subjected to high-energy electron irradiation (HEEI) to total fluence of 2 × 10 13 cm -2. ZnO/Si MSM-PDs demonstrated at least 43\% greater radiation resistance than similar Si devices. Room-temperature annealing of radiation damage was observed as 63\% recovery of photocurrent over 47 days. The current transport mechanism for ZnO/Si MSM-PDs was dominated by space-charge-limited conduction (SCLC) with minimal effect on conduction regime due to HEEI. Analysis of photoluminescence (PL) data indicates that the radiation-induced defects are likely oxygen and zinc vacancies, i.e., (V 0 +) and (V Zn --H +) 0, respectively.",

keywords = "radiation resistance, room-temperature annealing, ZnO/Si MSM photodetector",

author = "Frank Catalfamo and Tingfang Yen and Juhyung Yun and Anderson, \{Wayne A.\}",

year = "2011",

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doi = "10.1007/s11664-010-1411-1",

language = "English",

volume = "40",

pages = "433--439",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "4",

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TY - JOUR

T1 - Effects of high-energy electron irradiation on ZnO/Si MSM photodetectors

AU - Catalfamo, Frank

AU - Yen, Tingfang

AU - Yun, Juhyung

AU - Anderson, Wayne A.

PY - 2011/4

Y1 - 2011/4

N2 - ZnO/Si metal-semiconductor-metal photodetectors (MSM-PDs) were subjected to high-energy electron irradiation (HEEI) to total fluence of 2 × 10 13 cm -2. ZnO/Si MSM-PDs demonstrated at least 43% greater radiation resistance than similar Si devices. Room-temperature annealing of radiation damage was observed as 63% recovery of photocurrent over 47 days. The current transport mechanism for ZnO/Si MSM-PDs was dominated by space-charge-limited conduction (SCLC) with minimal effect on conduction regime due to HEEI. Analysis of photoluminescence (PL) data indicates that the radiation-induced defects are likely oxygen and zinc vacancies, i.e., (V 0 +) and (V Zn --H +) 0, respectively.

AB - ZnO/Si metal-semiconductor-metal photodetectors (MSM-PDs) were subjected to high-energy electron irradiation (HEEI) to total fluence of 2 × 10 13 cm -2. ZnO/Si MSM-PDs demonstrated at least 43% greater radiation resistance than similar Si devices. Room-temperature annealing of radiation damage was observed as 63% recovery of photocurrent over 47 days. The current transport mechanism for ZnO/Si MSM-PDs was dominated by space-charge-limited conduction (SCLC) with minimal effect on conduction regime due to HEEI. Analysis of photoluminescence (PL) data indicates that the radiation-induced defects are likely oxygen and zinc vacancies, i.e., (V 0 +) and (V Zn --H +) 0, respectively.

KW - radiation resistance

KW - room-temperature annealing

KW - ZnO/Si MSM photodetector

UR - https://www.scopus.com/pages/publications/79952185341

U2 - 10.1007/s11664-010-1411-1

DO - 10.1007/s11664-010-1411-1

M3 - Article

AN - SCOPUS:79952185341

SN - 0361-5235

VL - 40

SP - 433

EP - 439

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 4

ER -

Effects of high-energy electron irradiation on ZnO/Si MSM photodetectors

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