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Effects of Eu interfacial mobility on the growth of epitaxial EuBa2 Cu3 O7-δ films

  • H. Wang
  • , X. Z. Liao
  • , H. F. Xu
  • , X. Zhang
  • , Y. Lin
  • , S. R. Foltyn
  • , P. N. Arendt
  • , J. L. MacManus-Driscoll
  • , Y. T. Zhu
  • , Q. X. Jia
  • Los Alamos National Laboratory
  • The University of Chicago
  • University of Wisconsin-Madison

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

By inserting a thin YBa2 Cu3 O7-δ (Y123) seed layer, high quality EuBa2 Cu3 O7-δ (Eu123) films can grow with epitaxial c -axis orientation on SrTiO3 (STO) substrate without increasing the growth temperature. The interfacial structures of Eu123STO and Eu123Y123STO were investigated using scanning transmission electron microscopy. Results show that the Eu mobility on the STO substrate is very low at the regular deposition temperature. This leads to nonuniform composition distribution at the Eu123STO interface and a mixture of c -axis and a -axis growth. A thin Y123 seed layer greatly improves the Eu mobility and therefore facilitates high quality c -axis growth.

Original languageEnglish
Article number101912
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number10
DOIs
StatePublished - Mar 7 2005

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