Effects of electron-phonon interaction on impurity states in znse/zncdse quantum wells under electric fields

Z. H. Huang; S. D. Liang; C. Y. Chen; D. L. Lin

doi:10.1016/S0038-1098(97)00288-3

Effects of electron-phonon interaction on impurity states in znse/zncdse quantum wells under electric fields

Z. H. Huang
, S. D. Liang
, C. Y. Chen
, D. L. Lin

Physics

Guangzhou University
The University of Hong Kong
China Center of Advanced Science and Technology World Laboratory

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Effects of electron-phonon interaction on the ground state of a donor in ZnSe/ZnCdSe quantum wells under external electric fields are studied theoretically for the impurity atom doped at various positions. Both the interface and confined phonon modes that exist in such structures are included to interact with the electron. The ground state energy is calculated by means of the Lee, Low and Pines transformation. The polaronic effects are generally much more significant than those in III-V compounds we have found in the past due to stronger electron-phonon interactions. Contributions from different phonon modes are computed separately and results obtained for various cases are presented and discussed.

Original language	English
Pages (from-to)	281-285
Number of pages	5
Journal	Solid State Communications
Volume	104
Issue number	5
DOIs	https://doi.org/10.1016/S0038-1098(97)00288-3
State	Published - Nov 1997

Keywords

A. Quantum wells
C. Impurities in semiconductors
D. Electron-phonon interactions
Semiconductors

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10.1016/S0038-1098(97)00288-3

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title = "Effects of electron-phonon interaction on impurity states in znse/zncdse quantum wells under electric fields",

abstract = "Effects of electron-phonon interaction on the ground state of a donor in ZnSe/ZnCdSe quantum wells under external electric fields are studied theoretically for the impurity atom doped at various positions. Both the interface and confined phonon modes that exist in such structures are included to interact with the electron. The ground state energy is calculated by means of the Lee, Low and Pines transformation. The polaronic effects are generally much more significant than those in III-V compounds we have found in the past due to stronger electron-phonon interactions. Contributions from different phonon modes are computed separately and results obtained for various cases are presented and discussed.",

keywords = "A. Quantum wells, C. Impurities in semiconductors, D. Electron-phonon interactions, Semiconductors",

author = "Huang, \{Z. H.\} and Liang, \{S. D.\} and Chen, \{C. Y.\} and Lin, \{D. L.\}",

year = "1997",

month = nov,

doi = "10.1016/S0038-1098(97)00288-3",

language = "English",

volume = "104",

pages = "281--285",

journal = "Solid State Communications",

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TY - JOUR

T1 - Effects of electron-phonon interaction on impurity states in znse/zncdse quantum wells under electric fields

AU - Huang, Z. H.

AU - Liang, S. D.

AU - Chen, C. Y.

AU - Lin, D. L.

PY - 1997/11

Y1 - 1997/11

N2 - Effects of electron-phonon interaction on the ground state of a donor in ZnSe/ZnCdSe quantum wells under external electric fields are studied theoretically for the impurity atom doped at various positions. Both the interface and confined phonon modes that exist in such structures are included to interact with the electron. The ground state energy is calculated by means of the Lee, Low and Pines transformation. The polaronic effects are generally much more significant than those in III-V compounds we have found in the past due to stronger electron-phonon interactions. Contributions from different phonon modes are computed separately and results obtained for various cases are presented and discussed.

AB - Effects of electron-phonon interaction on the ground state of a donor in ZnSe/ZnCdSe quantum wells under external electric fields are studied theoretically for the impurity atom doped at various positions. Both the interface and confined phonon modes that exist in such structures are included to interact with the electron. The ground state energy is calculated by means of the Lee, Low and Pines transformation. The polaronic effects are generally much more significant than those in III-V compounds we have found in the past due to stronger electron-phonon interactions. Contributions from different phonon modes are computed separately and results obtained for various cases are presented and discussed.

KW - A. Quantum wells

KW - C. Impurities in semiconductors

KW - D. Electron-phonon interactions

KW - Semiconductors

UR - https://www.scopus.com/pages/publications/0031273493

U2 - 10.1016/S0038-1098(97)00288-3

DO - 10.1016/S0038-1098(97)00288-3

M3 - Article

AN - SCOPUS:0031273493

SN - 0038-1098

VL - 104

SP - 281

EP - 285

JO - Solid State Communications

JF - Solid State Communications

IS - 5

ER -

Effects of electron-phonon interaction on impurity states in znse/zncdse quantum wells under electric fields

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Keywords

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